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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 15A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：15A
- Rds On (Max) @ Id, Vgs：6.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1800pF @ 25V
- Power - Max：3.2W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The onsemi NVMFD5852NLT1G is a dual N-channel power MOSFET housed in an SO-8FL (DFN8) 5x6 mm surface-mount package. It features a drain-source breakdown voltage of 40 V and a continuous drain current of 44 A at case temperature of 25°C. The device exhibits a maximum on-resistance of 6.9 mΩ at a gate-source voltage of 10 V, with a total gate charge of 36 nC. It supports a maximum power dissipation of 27 W at 25°C case temperature and operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Compact 5x6 mm DFN8 footprint enables high-density PCB layouts for space-constrained designs.
- Low on-resistance minimizes conduction losses to improve overall system efficiency.
- Low gate charge reduces switching energy loss and simplifies driver requirements.
- AEC-Q101 qualified for reliability in automotive electronic environments.
Applications
- Automotive power distribution systems
- DC-DC converter output stages
- Motor control circuits
Procurement Notes
Verify the specific suffix against official documentation to confirm tape-and-reel packaging and quantity specifications. Ensure the component meets RoHS standards if environmental compliance is required for the assembly process. Cross-reference the manufacturer's latest datasheet to confirm availability status and any potential lifecycle changes before finalizing procurement plans.
Selection Notes
Select this component when a dual N-channel configuration is required in a compact form factor. The 40V rating suits low-voltage DC bus applications. Evaluate thermal management needs based on the 27W dissipation rating and ensure the PCB copper area supports the specified thermal resistance values for the intended operating conditions.
Part Context
This part belongs to the NVMFD series of dual MOSFETs from onsemi, designed for high-efficiency power switching. The series utilizes advanced silicon technology to achieve low on-resistance within small packages. It serves as a standard solution for replacing discrete dual MOSFET setups in modern electronics.
Replacement Considerations
Direct substitutes include other 40V dual N-channel MOSFETs in SO-8FL packages with comparable Rds(on) and Qg values. Verify pinout compatibility and thermal characteristics before substitution.
