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The NVMFD5853NLWFT1G is a dual N-channel enhancement-mode Power MOSFET manufactured by onsemi. It features a 40V drain-source voltage (Vds) rating and supports a continuous drain current (Id) of 34A. The device incorporates a low on-resistance (Rds(on)) of 10mΩ, ensuring efficient power handling in compact applications. Packaged in an SO-8FL-Dual-8 surface-mount configuration, it is designed for high-density circuit layouts. The component meets AEC-Q101 automotive qualification standards, indicating suitability for demanding environments with operating temperatures ranging from -55°C to +175°C.
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm that the specific ordering suffix matches the required package and tape-and-reel specifications. Ensure storage and handling procedures comply with moisture sensitivity level requirements to maintain device integrity prior to assembly.
Select this component when a dual-switching solution is required for low-voltage, high-current applications. The 40V rating and 34A current capacity define its operational limits. Consider the SO-8FL package dimensions for PCB footprint constraints. Verify thermal management requirements based on the specified power dissipation capabilities.
This part belongs to the NVMFD5 series of dual MOSFETs from onsemi, optimized for automotive and industrial power management. The series emphasizes low on-resistance and robust packaging for reliable performance in space-constrained designs.
Direct substitutes include NVMFD5852NLWFT1G and NVMFD5873NLWFT1G. Verify compatibility regarding voltage ratings, current capacity, and pinout configurations before implementation.