ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 10A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：10A
- Rds On (Max) @ Id, Vgs：13mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1560pF @ 25V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The NVMFD5873NLT1G is a dual N-channel power MOSFET manufactured by onsemi. It features a DFN-8 surface-mount package and utilizes silicon technology. The device supports a drain-source voltage of 60 V and delivers a continuous drain current of 58 A. Its maximum on-resistance is 13 mΩ at a gate-source voltage of 10 V, with a gate charge of 30.5 nC. The component operates within a temperature range of -55 °C to +175 °C and has a power dissipation rating of 107 W.
Feature Summary
- Dual N-channel configuration for efficient circuit design
- Low on-resistance to minimize conduction losses
- DFN-8 package optimized for thermal performance
Applications
- Automotive systems requiring compact power solutions
- Low-side and high-side driver circuits
- Solenoid drivers in automotive applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and ensure the component meets required automotive qualification standards before integration into final designs.
Selection Notes
Select this component when a dual N-channel MOSFET with low on-resistance and high current capability is required. The DFN-8 package provides a compact footprint suitable for space-constrained designs. Ensure the application voltage and current ratings remain within the specified 60 V and 58 A limits.
Part Context
This part belongs to the NVMFD5873NL series of dual N-channel MOSFETs from onsemi. The series is designed for automotive applications, offering enhanced thermal performance and optical inspection capabilities through wettable flanks options. It complements other devices in the portfolio such as the NVMFD5877NL.
Replacement Considerations
Check for direct substitutes within the same series, such as the NVMFD5873NLWFT1G, which shares similar electrical characteristics but may differ in packaging or reel specifications. Verify pinout compatibility and thermal requirements before substitution.
