NVMFD5873NLWFT1G

Overview

The NVMFD5873NLWFT1G is a dual N-channel Power MOSFET manufactured by onsemi, housed in a DFN-8 surface-mount package. It features a 60 V drain-source breakdown voltage and supports a continuous drain current of 58 A. The device exhibits a maximum on-resistance of 13 mΩ at a gate-source voltage of 10 V. Key electrical parameters include a gate charge of 30.5 nC and a threshold voltage of 2.5 V. It operates within a junction temperature range of -55 °C to +175 °C with a power dissipation rating of 107 W.

Feature Summary

• Dual N-channel configuration for space-efficient circuit designs
• Low on-resistance for reduced conduction losses
• Enhanced thermal performance via compact DFN-8 packaging

Applications

• Automotive power distribution systems
• High-density DC-DC converter modules
• Industrial motor control circuits

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and reel specifications. Ensure compatibility with RoHS standards and check for automotive qualification status if required for the target application environment.

Selection Notes

Select this component when a dual N-channel topology is required in a compact footprint. Evaluate the 13 mΩ on-resistance against thermal management constraints to ensure the 107 W power dissipation rating remains sufficient for the intended operating conditions.

Part Context

This part belongs to the NVMFD series of dual MOSFETs from onsemi. These devices are engineered for applications demanding high efficiency and small board area. The DFN-8 package provides improved thermal characteristics compared to traditional SO-8 packages.

Replacement Considerations

Consult official cross-reference data for verified substitutes. Generic equivalents may differ in thermal resistance or switching speed.