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The NVMFD5875NLWFT1G is a dual N-channel enhancement mode MOSFET from onsemi, rated for a drain-source voltage of 60 V and a continuous drain current of 22 A. It features a low on-resistance of 3 mΩ and a typical gate charge of 9 nC at 10 V. The device operates within a temperature range of -55°C to +175°C, with a power dissipation of 44 W. Packaged in an SO-8FL surface-mount format, it meets AEC-Q101 automotive standards.
Verify the specific suffix WFT1G against official datasheets to confirm packaging and tape-and-reel specifications. Confirm availability status as discontinuation notices may apply to this series. Request RoHS and REACH compliance documentation prior to final procurement decisions.
Select this component when a dual N-channel topology is required within a small footprint. Ensure the 60 V rating exceeds the maximum circuit voltage. Verify that the 22 A current capability aligns with thermal management constraints in the target application environment.
This part belongs to the NVMFD5875NL family of dual MOSFETs designed for automotive use. It shares the SO-8FL package form factor with other variants in the series but differs in electrical ratings such as on-resistance and current handling capabilities compared to single-channel counterparts.
Direct substitutes include NVMFD5875NLT3G and NVMFD5877NLWFT1G. Verify pin compatibility and electrical parameters before substitution. Check for updated lifecycle statuses as older revisions may be discontinued.