NVMFD5875NLWFT1G

NVMFD5875NLWFT1G

  • Description:MOSFET 2N-CH 60V 7A 8DFN
  • Series:-

SKU:cc717c5afe2d Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 7A 8DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:7A
  • Rds On (Max) @ Id, Vgs:33mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:540pF @ 25V
  • Power - Max:3.2W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVMFD5875NLWFT1G

Overview

The NVMFD5875NLWFT1G is a dual N-channel enhancement mode MOSFET from onsemi, rated for a drain-source voltage of 60 V and a continuous drain current of 22 A. It features a low on-resistance of 3 mΩ and a typical gate charge of 9 nC at 10 V. The device operates within a temperature range of -55°C to +175°C, with a power dissipation of 44 W. Packaged in an SO-8FL surface-mount format, it meets AEC-Q101 automotive standards.

Feature Summary

  • Dual configuration integrates two independent N-channel transistors into a single compact package for space-constrained designs.
  • Low on-resistance minimizes conduction losses and improves overall system efficiency during high-current operation.
  • AEC-Q101 qualification ensures reliability and compliance for demanding automotive electronic applications.

Applications

  • Automotive power distribution systems
  • High-side or low-side load switching circuits
  • DC-DC converter output stages

Procurement Notes

Verify the specific suffix WFT1G against official datasheets to confirm packaging and tape-and-reel specifications. Confirm availability status as discontinuation notices may apply to this series. Request RoHS and REACH compliance documentation prior to final procurement decisions.

Selection Notes

Select this component when a dual N-channel topology is required within a small footprint. Ensure the 60 V rating exceeds the maximum circuit voltage. Verify that the 22 A current capability aligns with thermal management constraints in the target application environment.

Part Context

This part belongs to the NVMFD5875NL family of dual MOSFETs designed for automotive use. It shares the SO-8FL package form factor with other variants in the series but differs in electrical ratings such as on-resistance and current handling capabilities compared to single-channel counterparts.

Replacement Considerations

Direct substitutes include NVMFD5875NLT3G and NVMFD5877NLWFT1G. Verify pin compatibility and electrical parameters before substitution. Check for updated lifecycle statuses as older revisions may be discontinued.

NVMFD5875NLWFT1GNVMFD5875NLWFT1G

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