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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 24A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 127A (Tc)
- Rds On (Max) @ Id, Vgs：2.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2450pF @ 25V
- Power - Max：3.2W (Ta), 89W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The onsemi NVMFD5C446NWFT1G is a dual N-channel power MOSFET designed for high-efficiency applications. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 66A at case temperature of 25°C. The device exhibits a low on-resistance (RDS(on)) of 2.65mΩ at VGS=10V and 3.9mΩ at VGS=4.5V. Packaged in a compact DFN8 5x6mm SO-8FL format, it supports surface mount technology with a maximum junction temperature of 175°C and an operating temperature range from -55°C to +175°C.
Feature Summary
- Dual channel configuration within a compact 5x6mm DFN8 package for space-constrained designs
- Low on-resistance characteristics to minimize conduction losses and improve efficiency
- Automotive-grade reliability with AEC-Q101 certification and PPAP capability
- Lead-free construction compliant with RoHS standards
Applications
- Automotive electronic systems requiring high reliability
- Compact power modules and portable devices
- High-frequency switching power conversion circuits
Procurement Notes
Verify the specific suffix 'WFT1G' against official datasheets to confirm reel packaging and tape specifications. Ensure the component matches the DFN8 5x6mm physical dimensions required by the PCB footprint. Confirm that the dual N-channel configuration aligns with the circuit design requirements before integration.
Selection Notes
Select this component when a dual N-channel topology is required in a small form factor. The low RDS(on) values make it suitable for high-current applications where thermal management is critical. Verify that the 40V rating meets the system voltage requirements and that the gate drive voltage supports the specified RDS(on) performance levels.
Part Context
This part belongs to the NVMFD5C446N series of dual N-channel MOSFETs from onsemi. It shares similar electrical characteristics with single-channel variants like the NVD5C446N but offers two independent channels in one package. The series is engineered for automotive and industrial applications demanding high power density and robust performance.
Replacement Considerations
Direct substitutes include other dual N-channel MOSFETs with comparable 40V ratings and DFN8 packages. Verify pinout compatibility and thermal resistance values when considering alternatives from other manufacturers.
