NVMFD5C466NLET1G

Overview

The NVMFD5C466NLET1G is a dual N-channel Power MOSFET manufactured by onsemi, designed for high-efficiency power switching applications. It features a DFN-8 (SO-8FL) surface-mount package with dimensions of 5x6 mm. The device supports a drain-source voltage (Vds) of 40 V and delivers a continuous drain current (Id) of 52 A at case temperature of 25°C. Key electrical parameters include a maximum on-resistance (Rds(on)) of 7.4 mΩ at Vgs = 10 V and a total gate charge (Qg) of 16 nC. It operates within a junction temperature range of -55°C to +175°C and holds AEC-Q101 automotive qualification.

Feature Summary

• Dual N-channel configuration in a compact 5x6 mm DFN-8 package for space-constrained designs.
• Low on-resistance minimizes conduction losses and improves overall system efficiency.
• Automotive-grade reliability certified under AEC-Q101 standards.
• Lead-free construction compliant with RoHS directives.

Applications

• Automotive power management systems
• Motor control circuits
• DC-DC converter modules

Procurement Notes

Verify the specific suffix LET1G against official datasheets to confirm the tape-and-reel packaging format and quantity. Ensure compatibility with standard SMD/SMT assembly processes. Confirm that the AEC-Q101 qualification meets the specific reliability requirements of the target application environment before finalizing procurement.

Selection Notes

Select this component when a dual N-channel topology is required in a small footprint. The 40V rating suits low-voltage automotive and industrial systems. Compare Rds(on) and Qg values against single-channel alternatives to determine if the dual configuration offers sufficient PCB area savings without compromising thermal performance or switching speed.

Part Context

This part belongs to the NVMFD5C466N series from onsemi, which focuses on low-loss power switching solutions. The series utilizes silicon technology optimized for high current density. The DFN-8 package variant provides enhanced thermal dissipation compared to traditional SO-8 packages while maintaining a small board profile suitable for modern miniaturized electronics.

Replacement Considerations

Direct replacements must match the 40V/52A dual N-channel specification and DFN-8 footprint. Verify pinout compatibility and thermal resistance characteristics. Cross-reference with other onsemi parts like NVMFD5C462NT1G for lower Rds(on) options, ensuring package and electrical ratings align with the existing design constraints.