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The NVMFD5C466NLWFET1G is a dual N-channel power MOSFET manufactured by onsemi, designed for high-efficiency power switching applications. It features a 40V drain-source voltage rating and supports a continuous drain current of 52A at case temperature (Tc=25°C). The device exhibits a low on-resistance (Rds(on)) of 7.4mΩ at Vgs=10V. Packaged in an 8-DFN (5x6mm) SO-8FL format with wettable flanks, it offers a maximum power dissipation of 40W at Tc. The component operates within a junction temperature range of -55°C to +175°C and holds AEC-Q101 automotive qualification.
Verify the specific suffix ET1G against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard reflow profiles for lead-free assemblies. Cross-reference part numbers carefully as minor suffix variations may indicate different packaging or testing criteria without altering electrical function.
Select this component when space constraints necessitate a 5x6mm dual MOSFET solution with automotive reliability requirements. The wettable flank option is critical for designs prioritizing high-volume automated optical inspection. Evaluate thermal management strategies based on the 40W power dissipation rating at case temperature to ensure operation within the specified junction temperature limits.
This device belongs to the NVMFD5C466N family from onsemi, which includes variants such as NVMFD5C466NT1G and NVMFD5C466NLWFT1G. These parts share similar electrical characteristics but differ in packaging options like standard DFN versus wettable flank configurations. The series targets automotive and industrial markets demanding robust performance in small form factors.
Direct substitutes include NVMFD5C466NLWFT1G and NVMFD5C466NLT1G, provided the wettable flank requirement is met. Verify pinout compatibility and thermal resistance values before substitution. Alternative packages like SO-8FL without wettable flanks may require PCB layout adjustments.