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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 10.5A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：10.5A (Ta), 29A (Tc)
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：8.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：420pF @ 25V
- Power - Max：3.1W (Ta), 23W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The onsemi NVMFD5C478NLT1G is a dual N-channel enhancement mode power MOSFET designed for surface-mount applications. It features a DFN-8 package with dimensions of 5.1 mm in length and 1.05 mm in height. The device supports a maximum drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 29 A. Key electrical parameters include a maximum on-resistance (Rds(on)) of 14.5 mΩ, a typical gate charge (Qg) of 6.3 nC at the specified gate-source voltage, and a forward voltage (Vf) of 0.84 V. It operates within a temperature range of -55°C to 175°C, with a maximum power dissipation (Pd) of 23 W.
Feature Summary
- Dual N-channel configuration integrated into a compact surface-mount package for space-constrained designs.
- Low on-resistance characteristic to minimize conduction losses and improve system efficiency.
- AEC-Q101 qualified for automotive reliability standards with PPAP capability.
- RoHS compliant and lead-free construction.
Applications
- Automotive electronic systems requiring AEC-Q101 compliance.
- High-density circuit boards where small footprint is critical.
- Power management circuits utilizing surface-mount technology.
Procurement Notes
Verify the specific suffix 'LT1G' against official datasheets to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and AEC-Q101 qualification details directly from the manufacturer's documentation before integration. Ensure thermal design accounts for the 23 W power dissipation limit under actual operating conditions.
Selection Notes
Select this component when a dual N-channel MOSFET with 40 V rating and low Rds(on) is required in a DFN-8 package. Compare gate charge values against driver capabilities to ensure efficient switching. Verify that the 29 A current rating meets peak load requirements while considering thermal derating at elevated temperatures.
Part Context
This part belongs to the NVMFD5C478NL series of dual N-channel power MOSFETs from onsemi. The series focuses on high-efficiency switching in compact packages. The LT1G suffix typically denotes specific packaging or reel configurations within the product line.
Replacement Considerations
Check for direct substitutes within the NVMFD5C478NL family or other 40 V dual N-channel MOSFETs in SO-8FL/DFN-8 packages. Ensure pinout compatibility and similar Rds(on) and Qg characteristics for drop-in replacement.
