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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 10.5A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：10.5A (Ta), 29A (Tc)
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：8.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：420pF @ 25V
- Power - Max：3.1W (Ta), 23W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVMFD5C478NLWFT1G is a dual N-channel enhancement-mode power MOSFET manufactured by onsemi. It features a SO-8FL-Dual-8 (DFN) surface-mount package with wettable flanks for optical inspection. Key electrical parameters include a drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 29 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 14.5 mΩ. It operates within a junction temperature range of -55°C to +175°C, supports a gate-source voltage of ±20 V, and has a typical gate charge (Qg) of 8.1 nC at Vgs. The component is AEC-Q101 qualified and RoHS compliant.
Feature Summary
- Dual N-channel configuration in a compact DFN package with wettable flanks for enhanced solder joint visibility.
- Low on-resistance design to minimize conduction losses and improve system efficiency.
- Automotive-grade reliability certified under AEC-Q101 standards with PPAP capability.
- High thermal performance supporting operation up to 175°C junction temperature.
Applications
- Automotive power distribution systems
- DC-DC converter circuits
- Motor control applications
Procurement Notes
Verify the specific suffix WFT1G against the official datasheet to confirm the reel quantity and tape-and-reel packaging specifications. Ensure that the wettable flank variant is required for automated optical inspection processes. Confirm RoHS compliance status and material declarations prior to final procurement decisions.
Selection Notes
Select this component when a 40 V rating and dual N-channel topology are required in an 8-pin DFN form factor. Compare Rds(on) and gate charge values against alternative devices to optimize switching losses. Verify that the 29 A current rating meets the thermal management capabilities of the target PCB layout and ambient conditions.
Part Context
This part belongs to the NVMFD5C478NL series from onsemi, designed for high-efficiency power switching. It shares the same family characteristics as other variants in the NVMFD5C series but is distinguished by its specific 40 V voltage rating and 14.5 mΩ on-resistance profile within the 8-lead DFN package.
Replacement Considerations
Direct substitutes must match the 40 V Vds, dual N-channel configuration, and 8-DFN footprint. Verify pinout compatibility and thermal resistance values. Check if alternative parts offer comparable Rds(on) and Qg metrics without requiring PCB redesign.
