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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 9.8A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：9.8A (Ta), 27A (Tc)
- Rds On (Max) @ Id, Vgs：17mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：6.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：325pF @ 25V
- Power - Max：3.1W (Ta), 23W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The onsemi NVMFD5C478NWFT1G is a dual N-channel enhancement mode power MOSFET designed for surface-mount applications. It features a DFN-8 package with dimensions of 5.1 mm by 6.1 mm and a height of 1.05 mm. The device supports a maximum drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 29 A. Key electrical parameters include a maximum drain-source on-resistance (Rds(on)) of 14.5 mΩ, a typical gate charge (Qg) of 6.3 nC, and a forward voltage (Vf) of 0.84 V. It operates within a temperature range of -55°C to +175°C with a power dissipation (Pd) of 23 W.
Feature Summary
- Dual N-channel configuration in a compact DFN-8 package for space-constrained designs
- Low on-resistance and gate charge characteristics to minimize conduction and switching losses
- AEC-Q101 qualified with PPAP capability for automotive reliability standards
Applications
- Automotive electronic systems requiring AEC-Q101 compliance
- High-density power management circuits
- Compact consumer electronics with strict size limitations
Procurement Notes
Verify the specific suffix 'WFT1G' against official datasheets to confirm the presence of solderable wings and tape-and-reel packaging. Confirm RoHS compliance and lead-free status as required by project specifications. Ensure the ordering part number matches the exact package variant intended for the PCB layout.
Selection Notes
Select this component when a dual N-channel MOSFET with low Rds(on) is needed in a small footprint. Compare Qg values against driver capabilities to ensure efficient switching. Verify thermal requirements against the 23 W dissipation rating and consider the impact of ambient temperature on current derating.
Part Context
This part belongs to the NVMFD5C478NL series from onsemi. It shares the core electrical specifications with variants like NVMFD5C478NLT1G but differs in packaging details such as the inclusion of solderable wings for optical inspection. The series is engineered for high-efficiency power switching in automotive and industrial applications.
Replacement Considerations
Direct substitutes within the same family include NVMFD5C478NLT1G. Verify pinout compatibility and package dimensions before substitution. Ensure that any alternative maintains the 40 V Vds and 29 A Id ratings to avoid derating issues.
