NVMFD5C674NLT1G

Overview

The onsemi NVMFD5C674NLT1G is a dual N-channel enhancement mode power MOSFET housed in an 8-pin PowerTDFN package measuring 5x6 mm. It features a drain-source voltage rating of 60 V and a continuous drain current of 42 A at case temperature of 25 °C, reducing to 26 A at 100 °C. The device exhibits a maximum on-resistance of 20.4 mΩ at VGS = 4.5 V and 11.7 mΩ typical at VGS = 10 V. Maximum gate-source voltage is ±20 V, with a threshold voltage range of 1.2 V to 2.2 V. Thermal performance includes a junction-to-case thermal resistance of 2.86 °C/W and a maximum power dissipation of 37 W at 25 °C case temperature.

Feature Summary

• Compact 5x6 mm footprint designed for high-density PCB layouts
• Low conduction losses via optimized channel architecture
• Reduced switching energy through minimized gate charge and capacitance
• Automotive-grade reliability with AEC-Q101 qualification

Applications

• Automotive power distribution systems
• High-density DC-DC converter modules
• Motor control circuits requiring compact form factors

Procurement Notes

Verify the specific suffix against official datasheets to confirm package variations or tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure storage conditions meet manufacturer recommendations to prevent moisture sensitivity issues prior to soldering.

Selection Notes

Select this component when space constraints require a small surface-mount package alongside high current handling capabilities. Evaluate thermal management requirements based on the specified junction-to-case resistance. Compare gate charge values against driver capabilities to ensure efficient switching speeds without excessive drive current demands.

Part Context

This part belongs to the NVMFD5C6xxNL series of dual MOSFETs from onsemi. The series shares common packaging dimensions and automotive qualification standards. Variations within the series typically involve differences in on-resistance and current ratings while maintaining the same physical envelope and pinout configuration.

Replacement Considerations

Direct substitutes include other 60V dual N-channel MOSFETs in 5x6mm DFN packages with comparable RDS(on) and ID ratings. Verify pin compatibility and thermal characteristics before substitution. Check for equivalent AEC-Q101 certification if automotive applications are involved.