ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 7.5A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Ta), 26A (Tc)
- Rds On (Max) @ Id, Vgs：28mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs：2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：350pF @ 25V
- Power - Max：3W (Ta), 19W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The NVMFD5C680NLWFT1G is a dual N-channel enhancement mode MOSFET from onsemi, rated for a drain-source voltage of 60V. It features a maximum continuous drain current of 7.5A at ambient temperature and 26A at case temperature. The device exhibits a typical on-resistance of 28mΩ at 5A with a 10V gate drive. Key electrical parameters include a maximum gate charge of 2nC at 4.5V and an input capacitance of 350pF at 25V. It operates within a junction temperature range of -55°C to 175°C and is housed in an 8-DFN (5x6mm) package with wettable flanks.
Feature Summary
- Dual N-channel configuration integrated into a compact surface-mount package.
- Wettable flank design facilitates automated optical inspection for solder joint verification.
- Automotive-grade qualification compliant with AEC-Q101 standards.
Applications
- Automotive power distribution systems
- DC-DC converter output stages
- Motor control circuits
Procurement Notes
Verify the complete part number including suffixes such as WFT1G against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and REACH declarations directly with the supplier or through published material declarations prior to procurement.
Selection Notes
Select this component when a dual N-channel topology is required in a space-constrained automotive application. Ensure the thermal management design accommodates the specified power dissipation limits at both ambient and case temperatures. Verify that the gate drive voltage meets the requirements for achieving the specified low on-resistance performance.
Part Context
This device belongs to the NVMFD5C6xxNL series of dual MOSFETs designed for high-efficiency power switching. It shares the same 8-pin DFN footprint family with variants offering different resistance and current ratings, allowing designers to scale performance while maintaining consistent board layout constraints across product lines.
Replacement Considerations
Direct substitutes within the same series include NVMFD5C680NLT1G. Cross-series replacements require matching the 60V rating, dual channel configuration, and 8-DFN package dimensions.
