NVMFD6H840NLT1G

Overview

The NVMFD6H840NLT1G is a dual N-channel MOSFET from onsemi, designed for surface-mount applications in the SO-8FL-Dual package. It features an 80V drain-source voltage rating and a continuous drain current of 14A at 25°C ambient or 74A at case temperature. The device exhibits a maximum on-resistance of 6.9mΩ at 20A and 10V gate drive. Key electrical parameters include a maximum gate charge of 32nC at 10V and a maximum input capacitance of 2002pF at 40V. It operates within a junction temperature range of -55°C to +175°C and holds AEC-Q101 automotive qualification.

Feature Summary

• Dual N-channel configuration providing two independent channels in a compact footprint.
• Automotive-grade reliability certified under AEC-Q101 standards.
• Low on-resistance design to minimize conduction losses and improve efficiency.
• Compact 8-DFN (5x6mm) package suitable for space-constrained layouts.

Applications

• Automotive power distribution systems
• DC-DC converter circuits
• Motor control applications

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with the target PCB footprint for the 8-DFN (5x6mm) housing. Confirm that the AEC-Q101 qualification meets the specific reliability requirements of the intended automotive or industrial application before finalizing component selection.

Selection Notes

Select this component when a dual N-channel topology is required in a small form factor. Compare the 6.9mΩ on-resistance and 32nC gate charge against single-channel alternatives if higher current density per channel is needed. Verify thermal management capabilities given the 14A/74A current ratings and ensure the driving circuit can handle the specified input capacitance for optimal switching performance.

Part Context

This part belongs to the NVMFD6H8xxNL series of dual MOSFETs from onsemi. It shares the SO-8FL-Dual package and 80V voltage class with other members like NVMFD6H852NL and NVMFD6H846NL. These devices are engineered to replace discrete dual-transistor solutions, offering improved thermal performance and reduced board space usage in high-density power designs.

Replacement Considerations

Direct pin-compatible substitutes within the same series include NVMFD6H852NL and NVMFD6H846NL. Verify that the alternative part's on-resistance and current ratings meet or exceed the original design requirements. Check for any differences in thermal resistance or gate charge that might impact switching speed and heat dissipation in the existing circuit layout.