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Product Detailed Parameters
- Description：MOSFET 2N-CH 80V 14A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：80V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 74A (Tc)
- Rds On (Max) @ Id, Vgs：6.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 96µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2002pF @ 40V
- Power - Max：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVMFD6H840NLWFT1G is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features an 80V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device utilizes a compact 8-DFN (5x6mm) surface-mount package, designated as SO-8FL-Dual. Key electrical characteristics include a maximum on-resistance of 6.9mΩ at 20A and 10V gate-source voltage. The component holds AEC-Q101 automotive qualification and supports lead-free manufacturing compliant with RoHS standards.
Feature Summary
- Dual N-channel configuration in a compact 5x6mm footprint for space-constrained designs
- Automotive-grade reliability certified under AEC-Q101 standards
- Low on-resistance performance to minimize conduction losses
- Enhanced optical inspection capability via available solderable wing variants
Applications
- Automotive power distribution systems
- High-density industrial motor control circuits
- On-board charging infrastructure components
Procurement Notes
Verify the specific suffix against official documentation to confirm package variations. Confirm current production status through authorized channels. Ensure compliance with environmental directives relevant to the target market. Validate thermal management requirements during integration.
Selection Notes
Evaluate the dual-channel architecture against single-channel alternatives for board space optimization. Consider the 6.9mΩ on-resistance for efficiency calculations at expected load currents. Assess the 80V rating margin relative to system supply voltages. Verify compatibility with standard surface-mount assembly processes.
Part Context
This component belongs to the NVMFD6H series of dual MOSFETs from onsemi. The series emphasizes high current density and low thermal resistance within small packages. It targets applications requiring robust switching capabilities in limited physical spaces.
Replacement Considerations
Cross-reference with other NVMFD6H series parts for pin-compatible alternatives. Verify that substitute devices meet identical AEC-Q101 requirements and thermal specifications.
