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The NVMFWD024N06CT1G is a dual N-channel power MOSFET from onsemi, housed in a DFN8 (SO-8FL) package with wettable flank terminals. It features a 60 V drain-to-source voltage rating and a maximum continuous drain current of 24 A at TC = 25 °C. The device exhibits a maximum RDS(on) of 22.6 mΩ at VGS = 10 V and ID = 3 A. Key electrical parameters include a total gate charge of 5.7 nC, an input capacitance of 333 pF, and a junction-to-case thermal resistance of 5.3 °C/W. The component operates within a temperature range of −55 to 175 °C.
Verify the specific ordering suffix 'T1G' corresponds to the tape and reel packaging configuration required for automated assembly processes. Confirm that the wettable flank variant meets the optical inspection standards mandated by the manufacturing facility. Ensure compliance with RoHS and halogen-free requirements before finalizing procurement specifications.
Select this component when high reliability and automated optical inspection are critical. The AEC-Q101 qualification makes it suitable for automotive applications requiring PPAP capability. Evaluate thermal management needs against the 5.3 °C/W junction-to-case resistance. Compare performance metrics with standard variants if wettable flanks are not necessary for the production line.
This part belongs to the NVMFD024N06C series of dual N-channel MOSFETs. The 'W' designation in the model number specifically indicates the inclusion of wettable flank terminals, distinguishing it from the standard NVMFD024N06CT1G variant which lacks this feature. Both share identical electrical characteristics and package dimensions.
The NVMFD024N06CT1G serves as a direct functional substitute where wettable flanks are not required. Verify pinout compatibility and thermal resistance values when considering alternative dual MOSFET packages.