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The NVMFWD027N10MCLT1G is a dual N-channel Power MOSFET manufactured by onsemi, designed for automotive and industrial applications. It features a 100V drain-source voltage (Vdss) and operates within a junction temperature range of -55°C to +175°C. The device is housed in an 8-DFN (5x6mm) package with wettable flanks, designated as SO-8FL. Key electrical parameters include a maximum on-resistance (Rds(on)) of 26 mΩ at Vgs=10V and Id=7A, and a gate charge (Qg) of 11nC at Vgs=10V. Continuous drain current ratings are specified as 28A at case temperature (Tc) and 7.4A at ambient temperature (Ta). The component holds AEC-Q101 qualification.
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the procurement channel provides valid traceability documentation required for automotive-grade components. Ensure the received parts match the exact part number designation to avoid compatibility issues with existing bill of materials.
Select this component when a dual N-channel topology is required within a constrained 5x6 mm footprint. The 100V rating suits low-voltage DC-DC converters and load switches. Evaluate thermal management requirements based on the 46W dissipation rating at case temperature. Consider the 26 mΩ on-resistance for efficiency calculations under expected load currents.
This device belongs to the NVMFWD series of automotive-grade dual MOSFETs from onsemi. It shares the same 5x6 mm SO-8FL package form factor with other members like the NVMFS015N10MCL, but differs in internal die configuration to provide two independent channels rather than a single high-current unit. This series targets space-sensitive automotive modules.
Direct pin-compatible substitutes within the same package may include other NVMFWD series variants such as NVMFWD020N10MCL or NVMFWD030N10MCL, provided their electrical ratings meet the circuit requirements. Verify Rds(on) and Qg values before substitution to ensure switching performance alignment.