NVMFWD027N10MCLT1G

NVMFWD027N10MCLT1G

  • Description:DUAL N-CHANNEL POWER MOSFET100 V
  • Series:-

SKU:5e17f84a3d9a Category: Brand:

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Product Detailed Parameters

  • Description:DUAL N-CHANNEL POWER MOSFET100 V
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:7.4A (Ta), 28A (Tc)
  • Rds On (Max) @ Id, Vgs:26mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:3V @ 38µA
  • Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:720pF @ 50V
  • Power - Max:3.1W (Ta), 46W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVMFWD027N10MCLT1G

Overview

The NVMFWD027N10MCLT1G is a dual N-channel Power MOSFET manufactured by onsemi, designed for automotive and industrial applications. It features a 100V drain-source voltage (Vdss) and operates within a junction temperature range of -55°C to +175°C. The device is housed in an 8-DFN (5x6mm) package with wettable flanks, designated as SO-8FL. Key electrical parameters include a maximum on-resistance (Rds(on)) of 26 mΩ at Vgs=10V and Id=7A, and a gate charge (Qg) of 11nC at Vgs=10V. Continuous drain current ratings are specified as 28A at case temperature (Tc) and 7.4A at ambient temperature (Ta). The component holds AEC-Q101 qualification.

Feature Summary

  • Dual N-channel configuration integrated into a compact 5x6 mm surface-mount package.
  • Wettable flank design facilitates enhanced optical inspection during automated assembly.
  • Qualified for automotive electronics through AEC-Q101 certification standards.
  • Low gate charge characteristics support efficient switching performance in power circuits.

Applications

  • Automotive power distribution systems requiring high reliability.
  • Industrial motor control and driver circuits.
  • General-purpose low-side switching applications in harsh environments.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the procurement channel provides valid traceability documentation required for automotive-grade components. Ensure the received parts match the exact part number designation to avoid compatibility issues with existing bill of materials.

Selection Notes

Select this component when a dual N-channel topology is required within a constrained 5x6 mm footprint. The 100V rating suits low-voltage DC-DC converters and load switches. Evaluate thermal management requirements based on the 46W dissipation rating at case temperature. Consider the 26 mΩ on-resistance for efficiency calculations under expected load currents.

Part Context

This device belongs to the NVMFWD series of automotive-grade dual MOSFETs from onsemi. It shares the same 5x6 mm SO-8FL package form factor with other members like the NVMFS015N10MCL, but differs in internal die configuration to provide two independent channels rather than a single high-current unit. This series targets space-sensitive automotive modules.

Replacement Considerations

Direct pin-compatible substitutes within the same package may include other NVMFWD series variants such as NVMFWD020N10MCL or NVMFWD030N10MCL, provided their electrical ratings meet the circuit requirements. Verify Rds(on) and Qg values before substitution to ensure switching performance alignment.

NVMFWD027N10MCLT1GNVMFWD027N10MCLT1G

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