NVMJD010N10MCLTWG

Overview

The NVMJD010N10MCLTWG is a dual N-channel power MOSFET from onsemi, rated for 100 V drain-to-source voltage and 62 A continuous drain current at 25°C case temperature. It features a maximum on-resistance of 10 mΩ at 10 V gate drive and 14.4 mΩ at 4.5 V. The device utilizes an LFPAK8 (CASE 760AF) surface-mount package with dimensions of approximately 5x6 mm. Key electrical characteristics include a total gate charge of 12.5 nC at 4.5 V and 26.4 nC at 10 V, with a reverse recovery charge of 31 nC. Thermal resistance from junction to case is 1.78 °C/W under steady-state conditions.

Feature Summary

• Dual N-Channel Configuration: Integrates two independent channels in a single compact package for space-efficient circuit designs.
• Low On-Resistance: Optimized RDS(on) minimizes conduction losses and improves overall system efficiency.
• Automotive Grade Qualification: Meets AEC-Q101 standards and supports PPAP requirements for automotive applications.
• Compact Footprint: Utilizes a small 5x6 mm LFPAK8 package to facilitate high-density PCB layouts.

Applications

• Automotive electronic control units and power distribution modules
• Synchronous rectification in DC-DC converters
• Motor driver circuits requiring dual-channel switching

Procurement Notes

Verify the specific ordering suffix TWG to confirm tape and reel packaging specifications. Ensure compatibility with standard reflow soldering profiles as defined by the lead temperature rating. Confirm that the application environment remains within the specified operating junction temperature range of -55°C to +175°C for reliable operation.

Selection Notes

Select this component when dual-channel isolation or synchronized switching is required within a constrained board area. Evaluate thermal management strategies based on the junction-to-case thermal resistance of 1.78 °C/W. Consider the gate charge values to determine appropriate driver capabilities for the target switching frequency.

Part Context

This part belongs to onsemi's NVMF series of low-voltage power MOSFETs designed for high-efficiency power conversion. The LFPAK8 package provides improved thermal performance compared to traditional SO-8 packages while maintaining a similar footprint. It is engineered for applications demanding robust avalanche energy handling and low switching losses.

Replacement Considerations

Direct replacements must match the 100V/62A rating and LFPAK8 package. Verify pinout compatibility between G1/S1/D1 and G2/S2/D2 configurations. Check if alternative parts meet the same AEC-Q101 qualification status if used in automotive contexts.