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The onsemi NVMJD015N04CL is a dual N-channel power MOSFET rated for 40 V drain-to-source voltage and 29 A continuous drain current at 25°C case temperature. It features a low on-resistance of 14.5 mΩ at 10 V gate drive, reducing conduction losses in high-current applications. The device utilizes an LFPAK8 (CASE 760AF) surface-mount package with a 5 x 6 mm footprint, providing compact design flexibility. Electrical characteristics include a total gate charge of 7.5 nC and fast switching times, supporting efficient driver performance. It operates within a junction temperature range of -55°C to +175°C.
Verify the specific ordering suffix TWG to confirm tape and reel packaging quantities. Ensure that the procurement channel provides valid traceability documentation required for AEC-Q101 qualified components. Confirm that the delivered parts match the CASE 760AF package dimensions specified in the datasheet before integration into the manufacturing process.
Select this component when a dual-channel topology is required within a constrained board area. Evaluate the thermal resistance parameters against the expected ambient conditions to ensure the junction temperature remains within safe operating limits. Consider the gate charge requirements to verify compatibility with the available driver circuitry for optimal switching performance.
This part belongs to onsemi's PowerTrench family of dual-channel MOSFETs. It shares the LFPAK8 package form factor with other devices in the series but offers distinct electrical ratings tailored for 40 V applications. The dual-channel architecture allows designers to reduce component count compared to using two discrete single-channel transistors.
Direct replacements must maintain the 40 V rating, dual-channel configuration, and LFPAK8 package. Verify that substitute devices meet or exceed the 14.5 mΩ on-resistance and 29 A current capabilities. Check pinout compatibility to ensure seamless integration without PCB layout modifications.