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The NVMJD2D7N04CL is a dual N-channel power MOSFET from onsemi, rated for a drain-to-source voltage of 40 V. It features a maximum continuous drain current of 121 A at TC = 25°C and a low on-resistance (RDS(on)) of 2.65 mΩ at VGS = 10 V. The device utilizes an LFPAK8 (CASE 760AF) package with dimensions of 5x6 mm. Key electrical parameters include a gate threshold voltage of 1.2 to 2.2 V, total gate charge of 57.3 nC at VGS = 10 V, and a junction-to-case thermal resistance of 2.12 °C/W. It supports a single-pulse avalanche energy of 463 mJ.
Verify the specific ordering suffix TWG to confirm tape and reel packaging quantities of 3000 units per reel. Ensure compatibility with LFPAK8 (CASE 760AF) footprints during PCB layout. Confirm RoHS compliance and lead-free status aligns with environmental regulations for the target assembly process.
Select this component when a dual N-channel topology is required within a 5x6 mm envelope. Evaluate thermal management needs based on the 2.12 °C/W junction-to-case resistance. Consider the 40 V rating and 121 A current capacity against peak load requirements. Verify that the gate drive voltage supports the specified RDS(on) performance levels.
This part belongs to onsemi's NVMJD series of dual N-channel MOSFETs designed for high-current automotive and industrial applications. It shares the LFPAK8 package form factor with other devices in the family but offers distinct electrical characteristics optimized for low-loss switching. The dual structure allows for independent or parallel channel operation.
Direct replacements must match the LFPAK8 package and 40V/121A ratings. Verify pinout compatibility between D1/S1/G1 and D2/S2/G2 configurations. Check if alternative parts meet the same AEC-Q101 qualification and PPAP requirements for automotive integration.