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Product Detailed Parameters
- Description：MOSFET N-CH 40V LFPAK56
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The NVMJD4D7N04CL is a dual N-channel power MOSFET rated at 40 V drain-to-source voltage. It features a maximum continuous drain current of 78 A at TC = 25°C and a low on-resistance of 4.7 mΩ at VGS = 10 V. The device utilizes an LFPAK8 (CASE 760AF) package with dimensions of 5x6 mm, providing a small footprint for compact designs. Key electrical parameters include a total gate charge of 23 nC, input capacitance of 1405 pF, and a junction-to-case thermal resistance of 2.97 °C/W. It supports a pulsed drain current of 324 A and operates within a temperature range of -55 to +175°C.
Feature Summary
- Dual N-Channel configuration in a compact 5x6 mm LFPAK8 package
- Low RDS(on) minimizes conduction losses for high efficiency
- Low QG and capacitance reduce driver losses and switching energy
- AEC-Q101 qualified and PPAP capable for automotive reliability
Applications
- Automotive power distribution systems
- Motor control applications requiring dual channel isolation
- High-efficiency DC-DC converter topologies
- Battery management system protection circuits
Procurement Notes
Verify the specific ordering suffix TWG to confirm tape and reel packaging quantities. Ensure the component meets RoHS compliance standards and lead-free requirements as specified in the datasheet. Confirm that the assembly location and wafer lot markings align with project traceability needs before finalizing procurement orders.
Selection Notes
Select this component when dual isolated channels are required within a minimal board area. Evaluate the 4.7 mΩ on-resistance against load current requirements to ensure thermal limits are not exceeded. Consider the 40 V rating relative to system voltage spikes and verify that the 23 nC gate charge matches the driving capability of the available controller ICs.
Part Context
This part belongs to onsemi's NVMJD series of dual N-channel MOSFETs designed for automotive and industrial applications. It shares the LFPAK8 footprint with other devices in the family but offers specific electrical characteristics tailored for high-current switching. The dual configuration allows for efficient implementation of half-bridge or synchronous rectifier stages.
Replacement Considerations
Direct pin-compatible replacements must maintain the LFPAK8 (CASE 760AF) package and similar RDS(on) values. Verify that any substitute device meets AEC-Q101 qualification if used in automotive contexts. Check that the replacement's gate charge and thermal resistance are compatible with existing drive circuits and heatsinking solutions.
