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Product Detailed Parameters
- Description：MOSFET N-CH 40V LFPAK56
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The NVMJD8D1N04CTWG is a dual N-channel power MOSFET from onsemi, rated for a drain-to-source voltage of 40 V. It features an 8.8 mΩ maximum drain-to-source on-resistance at a gate voltage of 10 V and a continuous drain current of 49 A at 25°C case temperature. The device utilizes an LFPAK8 (CASE 760AF) surface-mount package with dimensions of approximately 5x6 mm. It is qualified to AEC-Q101 standards and supports PPAP requirements. Key electrical characteristics include a total gate charge of 10.3 nC and a single-pulse avalanche energy rating of 73 mJ.
Feature Summary
- Dual configuration in a compact 5x6 mm footprint designed for space-constrained applications
- Low on-resistance minimizes conduction losses during steady-state operation
- Reduced gate charge and capacitance values lower driver power consumption
- Automotive-grade qualification ensures reliability under rigorous environmental conditions
Applications
- Automotive power distribution systems requiring high reliability
- DC-DC converter circuits utilizing synchronous rectification
- Motor control interfaces managing bidirectional current flow
- High-side or low-side switching stages in automotive lighting
Procurement Notes
Verify the specific ordering suffix 'TWG' confirms lead-free and RoHS compliance status before finalizing procurement. Confirm that the tape and reel packaging quantity matches the required production volume. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage prior to soldering.
Selection Notes
Evaluate the thermal resistance parameters against the expected ambient temperature and available copper pad area on the printed circuit board. Compare the total gate charge specifications with the driving capability of the intended controller IC to ensure adequate switching speed. Verify that the pulsed drain current limits accommodate potential inrush currents without exceeding the safe operating area boundaries.
Part Context
This component belongs to the NVMJD series of dual N-channel MOSFETs manufactured by onsemi. The series is engineered specifically for automotive electronics, emphasizing robust performance within strict spatial constraints. The LFPAK8 package provides a standardized mounting solution compatible with industry-standard PCB layouts for efficient thermal dissipation.
Replacement Considerations
Direct functional replacements within the same family include the NVMJD8D1N04C. Engineers should verify pinout compatibility and thermal characteristics when substituting components to maintain system integrity.
