NVVR26A120M1WSB

Overview

The NVVR26A120M1WSB is a Silicon Carbide (SiC) half-bridge power module from onsemi's VE-Trac family, designed for automotive traction inverters. It features a 1200 V drain-source voltage and a continuous drain current of 400 A at 175°C junction temperature. The module integrates M1 SiC technology with an aluminum nitride isolator substrate and sintered die attach for high reliability. Key electrical parameters include a maximum on-resistance of 4.6 mΩ at 175°C, a typical stray inductance of 7.1 nH, and a total gate charge of 1.75 µC. It operates within a junction temperature range of -40°C to 175°C and complies with the AQG324 automotive standard.

Feature Summary

• Integrates M1 SiC MOSFET technology in a half-bridge configuration for high efficiency and power density.
• Utilizes sintering technology for die attach and copper clips to enhance thermal performance and reliability.
• Features an aluminum nitride isolated substrate for superior thermal conductivity and basic isolation.
• Designed to meet AQG324 automotive standards with PPAP capability for rigorous quality assurance.

Applications

• Hybrid Electric Vehicle (HEV) traction inverters
• Electric Vehicle (EV) traction inverters

Procurement Notes

Verify component authenticity by checking the marking diagram against the physical device. Confirm compliance with the AQG324 automotive standard and ensure the specific ordering suffix matches the required package variant. Cross-reference the datasheet revision date to guarantee access to the most current electrical characteristics and mechanical dimensions before finalizing procurement specifications.

Selection Notes

Select this module for applications requiring high current handling and low switching losses in electric drive systems. Evaluate the thermal resistance values against the system's cooling strategy, particularly considering the single-side cooling design. Ensure the gate drive circuitry supports the specified threshold voltage and gate charge requirements to optimize switching performance and minimize electromagnetic interference.

Part Context

This component belongs to the VE-Trac/C0116 B2 SiC family of highly integrated power modules. It shares architectural similarities with variants like the NVVR26A120M1WSS and NVVR26A120M1WST, differing primarily in terminal configurations and specific packaging details while maintaining core electrical performance metrics for traction inverter applications.

Replacement Considerations

Direct replacements within the same family include NVVR26A120M1WSS and NVVR26A120M1WST. Verify pin compatibility and mechanical footprint alignment when substituting, as terminal styles may vary between straight tabs and other configurations. Ensure thermal interface material selection remains compatible with the aluminum nitride substrate.

FAQ

What is the maximum operating junction temperature for the NVVR26A120M1WSB?

The module is rated for continuous operation up to a maximum junction temperature (Tvj.Max) of 175°C.

How does the module achieve high reliability regarding die attachment?

The module utilizes sintering technology for die attach instead of traditional solder, which enhances thermal cycling performance and overall reliability under harsh automotive conditions.

What is the typical stray inductance value of this module?

The module is designed with ultra-low stray inductance, typically measuring approximately 7.1 nH, to minimize switching losses and voltage overshoot.