NVVR26A120M1WSS

NVVR26A120M1WSS

$325.16
  • Description:MOSFET 2N-CH 1200V AHPM15-CDI
  • Series:-

SKU:917d6a34a81d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 1200V AHPM15-CDI
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:400A (Tj)
  • Rds On (Max) @ Id, Vgs:2.6mOhm @ 400A, 20V
  • Vgs(th) (Max) @ Id:3.2V @ 150mA
  • Gate Charge (Qg) (Max) @ Vgs:1.75µC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:31700pF @ 800V
  • Power - Max:1kW (Tj)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:15-PowerDIP Module (2.441", 62.00mm)
  • Supplier Device Package:AHPM15-CDI
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVVR26A120M1WSS

Overview

The NVVR26A120M1WSS is a Silicon Carbide (SiC) power module from onsemi's EliteSiC series, designed for traction inverter applications. It features a half-bridge configuration with two N-channel MOSFETs and integrates M1 SiC technology. The device operates at a drain-source voltage of 1200 V and supports a continuous DC current of 400 A at 175°C junction temperature. Key electrical parameters include an on-resistance of 2.6 mΩ at 25°C and 4.6 mΩ at 175°C, with a typical forward voltage of 3.8 V. The module utilizes sintering technology for die attach to enhance reliability and thermal performance, meeting the AQG324 automotive standard.

Feature Summary

  • Integrates M1 SiC technology for high current density and robust short-circuit protection
  • Utilizes aluminum nitride isolator substrate for basic isolation and superior thermal conductivity
  • Employs sintered die technology to improve reliability and reduce thermal resistance
  • Features ultra-low stray inductance design to minimize switching losses and voltage overshoot

Applications

  • Automotive EV/HEV Traction Inverter
  • High-power density motor drives
  • Industrial inverters requiring high temperature operation

Procurement Notes

Verify component authenticity by checking the marking diagram against the physical package. Confirm compliance with the AQG324 automotive standard and PPAP capability requirements specific to your supply chain needs. Ensure that the ordering suffix matches the required tube packaging format for integration into your manufacturing process.

Selection Notes

Select this module for applications demanding high efficiency and power density in electric vehicle traction systems. Consider the 175°C continuous operating junction temperature and low thermal impedance when designing the cooling system. Evaluate the gate charge and switching energy characteristics against your inverter topology and switching frequency requirements to optimize overall system performance.

Part Context

This component belongs to the EliteSiC power module family, specifically engineered for automotive traction inverters. It represents a high-mobility compound semiconductor solution offering improved performance over traditional silicon devices. The module is part of the VE-Trac platform, which integrates advanced SiC MOSFET technologies within a single-side cooling architecture optimized for automotive environments.

Replacement Considerations

Consult official documentation for direct substitutes within the NVVR26A120M1WST or NVVR26A120M1WSB series if packaging variations are required. Verify pin compatibility and thermal interface specifications before substituting any alternative components to ensure seamless integration without redesigning the host circuit board.

NVVR26A120M1WSSNVVR26A120M1WSS
$325.16
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