NVXK2PR80WXT2

Overview

The NVXK2PR80WXT2 is a Silicon Carbide (SiC) Full Bridge Power Module designed for On-Board Charger (OBC) applications in xEVs. It features four SiC MOSFETs with a 1200 V drain-to-source voltage and an on-resistance of 80 mΩ at 25°C. The module operates within a junction temperature range of -55°C to 175°C and includes integrated NTC thermistors for thermal monitoring. Packaged in the APM32 format, it supports high-frequency switching with low total gate charge and offers automotive qualification per AEC-Q101 standards.

Feature Summary

• DIP Silicon Carbide Full Bridge configuration optimized for compact onboard charger designs
• Integrated NTC thermistors providing full traceability through module serialization
• Compliance with IEC60664-1 and IEC 60950-1 creepage and clearance requirements
• Automotive qualified according to AEC-Q101 and AQG324 standards

Applications

• On-Board Charger (OBC) systems for electric vehicles
• DC-DC converters in xEV powertrains
• High-efficiency power conversion modules requiring SiC technology

Procurement Notes

Verify the specific ordering suffix XXT2 corresponds to the tube shipping configuration containing ten units per package. Confirm that the APM32 mechanical outline matches the target PCB footprint dimensions of 44.00x28.80x5.70 mm. Ensure the selected variant meets the required automotive reliability standards for the intended vehicle application before finalizing procurement orders.

Selection Notes

Select this module when designing OBCs requiring high thermal efficiency and low conduction losses. The 80 mΩ RDS(on) minimizes heat generation compared to higher resistance alternatives. Verify that the driving circuitry can support the recommended +20/-5 V gate voltage range. Consider the integrated NTC sensors for accurate thermal management in space-constrained EV architectures.

Part Context

This component belongs to onsemi's portfolio of Silicon Carbide power modules tailored for electric mobility. It integrates four switches into a single DIP-style package to reduce parasitic inductance and improve switching performance. The design focuses on reducing total module resistance while maintaining robust isolation characteristics suitable for high-voltage automotive environments.

Replacement Considerations

Direct substitutes must match the 1200 V rating, 80 mΩ on-resistance, and APM32 package dimensions. Verify compatibility with existing gate drive voltages and thermal interface materials. Check if alternative modules offer similar switching loss characteristics and NTC integration without requiring PCB layout modifications.

FAQ

What is the maximum continuous drain current at 25°C case temperature?

The maximum continuous drain current is 31 A when the case temperature is maintained at 25°C.

Does the module include thermal sensing components?

Yes, the NVXK2PR80WXT2 includes two discrete NTC thermistors (10 kΩ, ±3%) for temperature monitoring.

What are the recommended gate-to-source voltage limits?

The recommended operation values are +20 V for turn-on and -5 V for turn-off, with absolute maximum ratings of +25 V and -15 V.