NVXK2VR80WDT2

Overview

The NVXK2VR80WDT2 is a DIP Silicon Carbide 3-Phase Bridge Power Module designed for xEV On-board Charger (OBC) applications. It features a 1200 V drain-to-source voltage and an 80 mΩ maximum on-resistance at 25°C, supporting a continuous drain current of 20 A. The module operates within a junction temperature range of -55°C to 175°C and dissipates up to 82 W. Packaged in the APM32 form factor with through-hole mounting, it integrates NTC thermistors for thermal monitoring. Key electrical parameters include a gate threshold voltage of 4.3 V, turn-on delay of 12 ns, and fall time of 9 ns.

Feature Summary

• DIP Silicon Carbide 3-Phase Bridge configuration optimized for high-power density OBC designs
• Compliance with IEC 60664-1 and IEC 60950-1 standards for creepage and clearance distances
• Automotive qualification per AEC-Q101 and AQG324 reliability standards
• Integrated NTC thermistor components for precise thermal management

Applications

• Power Factor Correction (PFC) stages in xEV On-board Chargers
• High-efficiency DC-DC conversion systems for electric vehicles
• Industrial power supplies requiring automotive-grade reliability

Procurement Notes

Verify component authenticity by cross-referencing the serial number printed on the package against official manufacturer records. Ensure the ordering suffix matches the specific datasheet revision required for your design. Confirm that the APM32 footprint dimensions align with your PCB layout constraints before finalizing procurement orders.

Selection Notes

Select this module when designing 3-phase bridge topologies for EV charging systems requiring 1200 V blocking capability. The 80 mΩ Rds(on) specification balances conduction losses with switching performance. Consider the 20 A continuous current rating relative to your thermal management strategy, as the module supports operation up to 175°C junction temperature.

Part Context

This component belongs to onsemi's EliteSiC portfolio of silicon carbide power modules. It utilizes advanced packaging technology to minimize parasitic inductance and improve thermal conductivity compared to discrete solutions. The module is part of a broader family of SiC devices aimed at electrifying transportation and improving grid infrastructure efficiency.

Replacement Considerations

Direct replacements must match the 1200 V rating, 3-phase bridge topology, and APM32 package outline. Verify that substitute modules meet the same AEC-Q101 and AQG324 automotive qualifications. Check pin compatibility, specifically the NTC integration and phase output configurations, to ensure seamless board-level integration.