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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 0.33A SOT666
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V, 50V
- Current - Continuous Drain (Id) @ 25°C：330mA, 170mA
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：36pF @ 25V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-666
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NX1029X is a complementary N/P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in an ultra-small SOT666 package. The N-channel device supports a drain-source voltage of 60 V and a continuous drain current of 330 mA, with a typical on-state resistance of 1 Ω at VGS = 10 V. The P-channel counterpart provides a -50 V drain-source voltage and -170 mA drain current, featuring a typical on-state resistance of 4.5 Ω at VGS = -10 V. Both channels offer logic-level compatibility and fast switching capabilities.
Feature Summary
- Logic-level compatible operation for direct interface with standard logic families
- Very fast switching performance enabled by Trench MOSFET technology
- Integrated electrostatic discharge protection up to 2 kV HBM for the N-channel
Applications
- Level shifter circuits
- Power supply converters
- Loadswitch applications
- General switching circuits
Procurement Notes
Verify that the specific order matches the non-automotive qualified status indicated in the December 2022 revision history. Confirm the SOT666 package variant aligns with board layout requirements. Ensure design safeguards account for the absolute maximum ratings regarding junction temperature and power dissipation limits during operation.
Selection Notes
Select this component for space-constrained designs requiring complementary N/P-channel functionality in a single footprint. The low gate charge values support high-frequency switching applications. Verify that the required drain current and voltage ratings remain within the specified limits for both N-channel and P-channel operations under expected thermal conditions.
Part Context
This device belongs to Nexperia's portfolio of small-signal Trench MOSFETs designed for surface-mount assembly. It replaces discrete dual-transistor solutions by integrating complementary pairs into the compact SOT666 plastic package. The product utilizes advanced trench technology to achieve low on-resistance and fast switching speeds suitable for portable electronics and signal processing.
Replacement Considerations
NX1029X
FAQ
Is the NX1029X automotive qualified?
No, the product data sheet revision dated December 28, 2022, explicitly states that the product has been changed to non-automotive qualification.
What is the ESD protection rating for the P-channel device?
The P-channel device (TR2) offers electrostatic discharge protection up to 1 kV according to the Human Body Model (HBM).
What is the typical total gate charge for the N-channel transistor?
The typical total gate charge (QG(tot)) for the N-channel device is 0.5 nC.
