NX1029XH

Overview

The NX1029X is a complementary N/P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in an SOT666 package. The N-channel device supports a drain-source voltage of 60 V and continuous drain current of 330 mA, with a typical on-state resistance of 1 Ω at VGS = 10 V. The P-channel counterpart provides a drain-source voltage of -50 V and continuous drain current of -170 mA, featuring a typical on-state resistance of 4.5 Ω at VGS = -10 V. Both transistors operate within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Logic-level compatible gate drive requirements
• Very fast switching performance enabled by Trench MOSFET technology
• Integrated electrostatic discharge protection up to 2 kV for the N-channel and 1 kV for the P-channel

Applications

• Level shifter circuits
• Power supply converters
• Loadswitch applications
• General switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the application environment does not require automotive qualification, as this product is explicitly designated as non-automotive qualified. Cross-reference the SOT666 footprint dimensions during PCB layout to guarantee proper surface-mount assembly compatibility.

Selection Notes

Select this component when space-constrained designs require a complementary pair in a single ultra-small lead package. The logic-level compatibility allows direct interfacing with standard digital logic outputs without additional level shifting drivers. Evaluate thermal dissipation constraints carefully, as the small plastic package limits total power dissipation compared to larger industrial packages.

Part Context

This part belongs to Nexperia's portfolio of small-signal field-effect transistors designed for high-density surface-mount applications. It utilizes advanced Trench MOSFET technology to achieve low on-resistance and fast switching speeds within the compact SOT666 outline. The complementary N/P configuration simplifies circuit design for push-pull or bridge topologies where minimal board area is critical.

Replacement Considerations

NX1029XH

FAQ

Is the NX1029X suitable for automotive applications?

No, the product data sheet explicitly states that this product is not automotive qualified and is intended for general-purpose use.

What is the maximum electrostatic discharge rating for the N-channel transistor?

The N-channel transistor (TR1) has an electrostatic discharge protection rating of up to 2 kV according to the Human Body Model (HBM).

How does the on-state resistance of the P-channel device compare to the N-channel device?

The P-channel device exhibits a higher typical on-state resistance of 4.5 Ω at VGS = -10 V, whereas the N-channel device typically offers 1 Ω at VGS = 10 V.