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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.17A 6TSSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Rds On (Max) @ Id, Vgs：4.5Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：20pF @ 30V
- Power - Max：1.33W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：-
- Qualification：-
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Overview
The NX138AKSF is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a SOT363 (SC-88) plastic surface-mounted package with six leads at a 0.65 mm pitch. The device features a drain-source voltage rating of 60 V and a continuous drain current of 170 mA at 25 °C. The typical drain-source on-state resistance is 3 Ω at VGS = 10 V. Total power dissipation reaches 325 mW at 25 °C ambient temperature, extending to 1.33 W when mounted on a specific FR4 PCB footprint. Junction temperature ranges from -55 °C to +150 °C.
Feature Summary
- Low threshold voltage for efficient logic-level driving
- Very fast switching capabilities enabled by Trench MOSFET technology
- Integrated ElectroStatic Discharge (ESD) protection
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Procurement Notes
Verify the complete part number against official Nexperia documentation to confirm the 'F' suffix designation. Confirm that the required packaging format matches the specific reel or cut tape configuration needed for the assembly process. Ensure the component version aligns with the latest product data sheet revision to avoid discrepancies in electrical characteristics or marking codes during production integration.
Selection Notes
Select this component for applications requiring compact dual N-channel switching in a minimal footprint. The low threshold voltage supports direct interfacing with standard logic families. Evaluate thermal performance based on the specific PCB copper area available for the drain mounting pad, as power dissipation ratings vary significantly between free-air conditions and board-mounted configurations.
Part Context
This component belongs to the NX138AKS family of dual N-channel Trench MOSFETs manufactured by Nexperia. The family utilizes advanced Trench technology to achieve fast switching speeds within small surface-mount packages like the SOT363. These devices are designed for general-purpose switching tasks where space constraints and low drive requirements are primary design considerations.
Replacement Considerations
Direct substitutes include other Nexperia dual N-channel MOSFETs in the SOT363 package, such as the NX138BKS or BSS138PS. Verify pinout compatibility and ensure that the alternative device meets or exceeds the 60 V drain-source voltage and 170 mA current requirements of the original design.
