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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.21A 6TSSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：210mA (Ta)
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：20pF @ 30V
- Power - Max：320mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：-
- Qualification：-
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Overview
The NX138BKSX is a dual N-channel enhancement mode Field-Effect Transistor manufactured by Nexperia USA Inc. It utilizes Trench MOSFET technology within a compact SOT363 (SC-88) surface-mount package. The device features a drain-source voltage rating of 60 V and a continuous drain current of 320 mA at 25°C ambient temperature. Key electrical characteristics include a maximum on-resistance of 4.5 Ohms at 10V gate drive, a threshold voltage range of 0.8V to 1.5V, and a gate charge of 1.4 nC. It operates across a temperature range of -55°C to +150°C junction temperature with a power dissipation capacity of 325 mW.
Feature Summary
- Dual N-channel configuration in a very small SOT363 plastic package
- Trench MOSFET technology for low threshold voltage and fast switching
- Electrostatic discharge protection exceeding 2 kV HBM standard
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching applications
Procurement Notes
Verify the specific suffix 'S' indicates the SOT363 packaging variant when sourcing. Confirm RoHS compliance status through official Nexperia documentation prior to integration. Ensure design compatibility with the specified thermal dissipation limits and operating temperature ranges defined in the datasheet.
Selection Notes
Select this component for designs requiring dual N-channel control in minimal board space. The low threshold voltage supports logic-level driving directly from microcontrollers. Verify that the 320 mA current rating and 4.5 Ohm on-resistance meet the specific load requirements of the target application circuit.
Part Context
This part belongs to the NX138 series of Trench MOSFETs from Nexperia. It shares functional similarities with single-channel variants like the NX138BK but provides two independent channels in one package. The SOT363 footprint allows for high-density PCB layouts compared to larger discrete transistor packages.
Replacement Considerations
The BSS138BKS is a confirmed substitute offering identical 60V dual N-channel specifications and SOT363 packaging. Verify pinout compatibility and exact electrical tolerances before final substitution.
