ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.35A 6TSSOP
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：350mA
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 350mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 15V
- Power - Max：445mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The NX3008NBKS,115 is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a 30 V drain-source voltage range and supports a continuous drain current of 350 mA per transistor at 25 °C. The device features a low on-state resistance of 1 Ω typ at VGS = 4.5 V. Packaged in a compact SOT363 (SC-88) surface-mount housing with six leads, it provides integrated ESD protection rated up to 2 kV HBM. Qualified under AEC-Q101 standards for automotive reliability, the component ensures efficient switching performance.
Feature Summary
- Dual N-channel configuration using Trench MOSFET technology for very fast switching speeds
- Low threshold voltage design enabling efficient drive characteristics
- Integrated electrostatic discharge protection rated up to 2 kV Human Body Model
- Qualified for automotive applications according to AEC-Q101 standards
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when space-constrained designs require dual independent N-channel control within a minimal footprint. The low gate charge and fast switching times make it suitable for high-frequency applications. Ensure thermal management accounts for the total power dissipation limits in free air versus PCB-mounted conditions. Confirm that the 30 V rating aligns with the system's maximum operating voltages.
Part Context
This part belongs to Nexperia's portfolio of small-signal MOSFETs designed for portable and automotive electronics. The SOT363 package allows for high-density board layouts. As a dual configuration, it replaces two single transistors, reducing component count and simplifying routing in low-side switching and signal driving applications.
Replacement Considerations
NX3008NBKSH
FAQ
What is the pin configuration for the dual transistors?
Pin 1 is Source 1, Pin 2 is Gate 1, Pin 3 is Drain 2, Pin 4 is Source 2, Pin 5 is Gate 2, and Pin 6 is Drain 1.
Does the device include internal body diodes?
Yes, each transistor includes an integrated source-drain diode with a typical forward voltage of 0.85 V at 350 mA.
What is the maximum junction temperature?
The maximum junction temperature is 150 °C.
