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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.35A 6TSSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 350mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 15V
- Power - Max：445mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NX3008NBKSH is a dual N-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology within a SOT363 (SC-88) surface-mounted package. The device supports a drain-source voltage of 30 V and a continuous drain current of 350 mA per transistor. Key electrical parameters include a maximum on-state resistance of 1.4 Ω at VGS = 4.5 V, a typical total gate charge of 0.52 nC, and an operating temperature range from -55 °C to +150 °C. The component is qualified under the AEC-Q101 standard.
Feature Summary
- Dual N-channel configuration utilizing Trench MOSFET technology for low threshold voltage and very fast switching performance.
- Integrated electrostatic discharge protection rated up to 2 kV.
- Qualified for automotive applications in accordance with the AEC-Q101 standard.
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm the exact tape-and-reel packaging quantity and manufacturing site code. Confirm that the requested variant matches the required automotive qualification status and package dimensions before finalizing procurement orders.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching applications. The low gate charge and fast switching characteristics make it suitable for high-frequency operation. Ensure the PCB layout accommodates the SOT363 footprint and thermal requirements for the intended power dissipation levels.
Part Context
This part belongs to the NX3008NBKS family of dual N-channel Trench MOSFETs. It shares core electrical specifications with other variants in the series but differs in physical packaging and marking codes. The SOT363 package provides a small form factor suitable for space-constrained designs.
Replacement Considerations
NX3008NBKS,115
FAQ
What is the maximum electrostatic discharge rating for the NX3008NBKSH?
The device features integrated ESD protection rated up to 2 kV.
Is the NX3008NBKSH suitable for automotive applications?
Yes, the product has been qualified in accordance with the AEC-Q101 standard for discrete semiconductors.
What is the typical total gate charge for this component?
The typical total gate charge is 0.52 nC.
