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NX3020NAK,215 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 30V 200MA TO236AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NX3020NAK,215
- Description：MOSFET N-CH 30V 200MA TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：4.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.44 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta), 1.06W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for NX3020NAK,215
Single FETs, MOSFETs Overview
The NX3020NAK,215 is a single N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates with a drain-source voltage of 30 V and a continuous drain current of 200 mA at 25 °C. The device features a typical on-state resistance of 4.5 Ω at VGS = 10 V and ID = 100 mA. It is housed in a TO-236AB (SOT23) surface-mounted package with three leads.
Single FETs, MOSFETs Feature Summary
- Very fast switching capability enabled by Trench MOSFET technology
- Integrated electrostatic discharge protection
- Low gate-source threshold voltage for efficient drive requirements
Single FETs, MOSFETs Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a compact single N-channel switch with low on-resistance. Ensure the design accommodates the thermal characteristics within the specified junction temperature range of -55 °C to +150 °C. Confirm that the required drain current does not exceed the absolute maximum ratings under the intended operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Nexperia NX3020 series of small-signal MOSFETs. It utilizes Trench technology to achieve fast switching speeds in a standard SOT23 plastic package. The series is designed for general-purpose switching applications where space efficiency and low threshold voltage are critical design parameters.
Single FETs, MOSFETs Replacement Considerations
Direct replacements must match the SOT23 package, 30 V rating, and N-channel configuration. Verify pinout compatibility and ensure equivalent or superior RDS(on) and thermal performance specifications are met before substitution.
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