NX3020NAKS,115

Overview

The NX3020NAKS,115 is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a SOT363 (SC-88) surface-mounted plastic package with six leads. Key electrical parameters include a drain-source voltage of 30 V and a continuous drain current of 180 mA at 25 °C. The device features a typical on-state resistance of 2.7 Ω at VGS = 10 V and ID = 100 mA. Total gate charge is typically 0.34 nC, supporting fast switching applications.

Feature Summary

• Very fast switching capability enabled by Trench MOSFET technology
• Integrated ElectroStatic Discharge (ESD) protection
• Low threshold voltage for efficient drive requirements

Applications

• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when space-constrained designs require dual N-channel switching in a minimal footprint. The low gate charge supports high-frequency operation, while the 30 V rating suits low-voltage logic interfaces. Ensure thermal management aligns with the specified junction-to-ambient resistance values for the target PCB copper area.

Part Context

This part belongs to Nexperia's NextPower series of small-signal MOSFETs. It shares architectural similarities with single-channel variants like the NX3008PBKV but provides two independent channels in one package. The SOT363 form factor allows for density optimization compared to larger transistor packages.

Replacement Considerations

Direct pin-compatible replacements include the NX3020NAKVYL in the SOT666 package, though physical dimensions differ. Verify that alternative dual N-channel devices meet the 30 V breakdown and 180 mA current requirements before substitution.