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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.2A SOT666
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：200mA
- Rds On (Max) @ Id, Vgs：4.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.44nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：20pF @ 10V
- Power - Max：260mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-666
- Grade：-
- Qualification：-
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Overview
The NX3020NAKVYL is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in an ultra-small and flat lead SOT666 Surface-Mounted Device plastic package with six leads. The device features a drain-source voltage rating of 30 V and a continuous drain current of 200 mA per transistor at 25 °C. Key electrical characteristics include a maximum on-state resistance of 4.5 Ω at VGS = 10 V, a gate-source threshold voltage ranging from 0.8 V to 1.4 V, and a total power dissipation capacity of 375 mW. The component operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Very fast switching performance enabled by Trench MOSFET technology
- Integrated electrostatic discharge (ESD) protection
- Low threshold voltage for efficient drive requirements
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix YL against official Nexperia documentation to confirm reel packaging specifications. Confirm that the component status aligns with design requirements, as availability may vary based on production cycles. Ensure all electrical parameters meet the target application limits before finalizing procurement decisions.
Selection Notes
Select this component when space-constrained designs require a dual N-channel configuration in a compact SOT666 footprint. The low threshold voltage supports logic-level driving, while the Trench technology ensures rapid switching speeds suitable for high-frequency applications. Evaluate thermal management needs relative to the 375 mW power dissipation limit under expected operating conditions.
Part Context
This part belongs to the NX3020NAKV series of dual N-channel Trench MOSFETs manufactured by Nexperia. The series utilizes advanced Trench technology to achieve fast switching and low on-resistance within small surface-mount packages. The NX3020NAKVYL variant specifically denotes the standard product version packaged for automated assembly processes.
Replacement Considerations
Direct substitutes include other Nexperia dual N-channel MOSFETs in the SOT666 package, such as the NX3020NAK. Verify pinout compatibility and ensure that alternative components meet or exceed the 30 V breakdown voltage and 200 mA current ratings required for the original design.
FAQ
What is the maximum drain-source voltage rating for the NX3020NAKVYL?
The maximum drain-source voltage (VDS) rating is 30 V.
Does the NX3020NAKVYL contain integrated ESD protection?
Yes, the datasheet specifies that the device includes integrated electrostatic discharge (ESD) protection.
What is the typical gate charge value for this component?
The typical total gate charge (QG) is 0.34 nC under specified test conditions.
