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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 0.17A 6TSSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V, 50V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta), 160mA (Ta)
- Rds On (Max) @ Id, Vgs：4.5Ohm @ 100mA, 10V, 7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.43nC @ 4.5V, 0.35nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：17pF @ 10V, 36pF @ 25V
- Power - Max：220mW, 280mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：-
- Qualification：-
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Overview
The NX6020CAKS is a complementary N/P-channel enhancement mode Field-Effect Transistor in an SOT363 (SC-88) package. It utilizes Trench MOSFET technology for fast switching. The N-channel device supports a drain-source voltage of 60 V and a continuous drain current of 170 mA, with a maximum on-state resistance of 4.5 Ω at VGS=10 V. The P-channel counterpart handles -50 V and -160 mA, featuring a maximum on-state resistance of 7.5 Ω at VGS=-10 V.
Feature Summary
- Complementary N/P-channel configuration in a single ultra-small surface-mounted package
- Trench MOSFET technology enabling very fast switching performance
- Integrated ElectroStatic Discharge (ESD) protection capabilities
Applications
- Relay driver circuits
- High-speed line drivers
- Level shifters
- Power supply converters
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the component meets the required thermal and electrical specifications for the intended operating environment before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring a compact complementary pair within space-constrained applications. Ensure gate drive voltages align with the specified thresholds for optimal on-state resistance. Consider the thermal resistance characteristics when designing PCB layouts to maintain junction temperatures within safe operating limits.
Part Context
This dual MOSFET belongs to Nexperia's portfolio of small-signal enhancement mode transistors. It is designed for general-purpose switching applications where minimal footprint and efficient power handling are critical. The SOT363 package allows for high-density mounting on printed-circuit boards compared to discrete single-transistor solutions.
Replacement Considerations
Check pinout compatibility and electrical ratings against potential substitutes. Verify that alternative components support the same SOT363 package dimensions and lead configurations to ensure seamless integration into existing board layouts without redesign.
FAQ
What is the maximum drain-source voltage for the N-channel transistor?
The maximum drain-source voltage for the N-channel device is 60 V.
Does the NX6020CAKS include ESD protection?
Yes, the datasheet lists integrated ElectroStatic Discharge (ESD) protection as a key feature.
What is the package type for this component?
The component is housed in a plastic surface-mounted SOT363 (SC-88) package.
