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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 0.17A 6TSSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V, 50V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Rds On (Max) @ Id, Vgs：4.5Ohm @ 100mA, 10V, 7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.43nC @ 4.5V, 0.35nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：17pF @ 10V, 36pF @ 25V
- Power - Max：330mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：-
- Qualification：-
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Overview
The NX6020CAKS is a complementary N/P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a SOT363 (SC-88) surface-mounted device plastic package. The N-channel device supports a drain-source voltage of 60 V and a continuous drain current of 170 mA, with a typical on-state resistance of 3 Ω at VGS = 10 V. The P-channel counterpart provides a drain-source voltage of -50 V and a drain current of -160 mA, featuring a typical on-state resistance of 4.5 Ω at VGS = -10 V.
Feature Summary
- Trench MOSFET technology for very fast switching performance
- Integrated ElectroStatic Discharge (ESD) protection
Applications
- Relay driver
- High-speed line driver
- Level shifter
- Power supply converter
Procurement Notes
Verify the specific part number against official Nexperia documentation to ensure compatibility with design requirements. Confirm that the SOT363 package dimensions and pinout align with the intended PCB footprint. Review the thermal characteristics and limiting values to ensure operation remains within safe junction temperature and power dissipation limits under expected load conditions.
Selection Notes
Select this component when a compact complementary pair is required for low-current switching applications. The SOT363 package offers space efficiency compared to discrete single transistors. Ensure the application voltage does not exceed the 60 V rating for the N-channel or -50 V for the P-channel device. Consider the on-state resistance values for potential power loss calculations in continuous duty cycles.
Part Context
This device belongs to Nexperia's portfolio of small-signal MOSFETs designed for general-purpose switching. It integrates both N-channel and P-channel enhancement mode FETs into a single package, facilitating balanced drive circuits. The use of Trench technology allows for optimized switching speeds and low on-resistance within a minimal footprint suitable for dense board layouts.
Replacement Considerations
NX6020CAK
FAQ
What is the maximum drain-source voltage for the N-channel transistor?
The maximum drain-source voltage (VDS) for the N-channel device (TR1) is 60 V.
Does the NX6020CAKS include ESD protection?
Yes, the datasheet lists integrated ElectroStatic Discharge (ESD) protection as a key feature.
What is the package type for this component?
The component is available in a TSSOP6 plastic surface-mounted package, also known as SOT363 or SC-88.
