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The NX7002AKS,115 is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in an SOT363 (TSSOP6) package. It features a drain-source voltage of 60 V and a continuous drain current of 170 mA per transistor. The device exhibits a typical on-state resistance of 4.5 Ω at VGS=10V and a total gate charge of 0.33 nC. Operating temperatures range from -55°C to 150°C junction temperature.
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Select this component for applications requiring dual N-channel switching in a compact surface-mount footprint. The low gate charge supports high-frequency operation, while the 60 V rating provides adequate headroom for standard logic-level control signals. Ensure thermal management accounts for the limited power dissipation capabilities inherent to the small plastic package.
This part belongs to Nexperia's portfolio of small-signal MOSFETs designed for space-constrained designs. The SOT363 package allows for high-density PCB layouts. As a dual configuration, it replaces two discrete single transistors, simplifying circuit design and reducing board space requirements for complementary or parallel switching tasks.
NX7002AKS,115
The absolute maximum gate-source voltage is rated at ±20 V.
No, this product is not automotive qualified and is not suitable for use in automotive equipment or applications beyond standard specifications.
The typical turn-on delay time is 6 ns under standard test conditions.