NXH003P120M3F2PTHG

Overview

The NXH003P120M3F2PTHG is a Silicon Carbide (SiC) power module from onsemi's EliteSiC series, featuring a 3 mΩ M3S MOSFET half-bridge topology in an F2 package. It integrates a thermistor and utilizes High Performance Substrate (HPS) Direct Bonded Copper technology. The device supports a drain-source voltage of 1200 V with a continuous drain current of 350 A at Tc = 80 °C. Key electrical parameters include a maximum gate-source voltage of +22/-10 V, a typical turn-on delay time of 49 ns, and a total gate charge of 1195 nC. The module operates within a junction temperature range of -40 °C to 175 °C.

Feature Summary

• Utilizes HPS DBC substrate for enhanced thermal performance and reliability
• Includes integrated thermistor for precise junction temperature monitoring
• Features pre-applied thermal interface material and press-fit pins for simplified assembly

Applications

• Solar Inverters
• Uninterruptible Power Supplies
• Electric Vehicle Charging Stations
• Industrial Power Systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm pin configuration and packaging details. Ensure compatibility with existing thermal management systems, as the module includes pre-applied TIM. Confirm that the press-fit installation method aligns with the target PCB design requirements before procurement.

Selection Notes

Select this component for high-efficiency applications requiring low conduction losses and fast switching speeds. The 3 mΩ resistance rating makes it suitable for high-current designs. Consider the 1200 V breakdown voltage for medium-voltage AC/DC conversion topologies. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended duty cycle.

Part Context

This part belongs to the EliteSiC family of silicon carbide modules designed for high-power density applications. It represents an evolution in SiC technology, offering improved thermal characteristics compared to standard substrates. The F2 package provides a standardized footprint for integration into various industrial and automotive power electronics platforms.

Replacement Considerations

Direct replacements must match the 1200 V rating, 3 mΩ Rds(on), and F2 package dimensions. Verify that any substitute maintains the same half-bridge topology and press-fit pin configuration. Cross-reference thermal resistance and switching loss characteristics to ensure equivalent performance in the target application.