NXH004P120M3F2PTHG

Overview

The NXH004P120M3F2PTHG is a Silicon Carbide (SiC) power module from onsemi's EliteSiC series, featuring a 4 mohm M3 MOSFET half-bridge topology in an F2 package with HPS DBC. It includes a thermistor and press-fit pins with pre-applied thermal interface material. Key electrical parameters include a drain-source voltage of 1200 V, continuous drain current of 284 A at Tc = 80 °C, and maximum power dissipation of 785 W. The device operates within a junction temperature range of -40 °C to 175 °C.

Feature Summary

• Integrated high-performance SiC MOSFET half-bridge with low on-resistance
• Includes built-in thermistor for precise thermal monitoring
• Utilizes High Performance Substrate (HPS) Direct Bonded Copper technology
• Features press-fit pin installation with pre-applied thermal interface material

Applications

• Solar Inverters
• Uninterruptible Power Supplies
• Electric Vehicle Charging Stations
• Industrial Power Systems

Procurement Notes

Verify the specific ordering suffix PTHG against official documentation to confirm the inclusion of press-fit pins and pre-applied TIM. Ensure compatibility with the F2 package dimensions and verify that the assembly site code matches project requirements before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high efficiency and compact form factors due to its low RDS(ON). Confirm that the system design supports the 1200 V rating and 284 A continuous current capability. Verify thermal management solutions align with the specified thermal resistance values and operating temperature limits.

Part Context

This part belongs to the EliteSiC family of silicon carbide modules designed for high-power density applications. It represents a generation of advanced power electronics utilizing M3 MOSFET technology to improve switching performance and reduce conduction losses compared to previous generations.

Replacement Considerations

Direct replacements must match the F2 package outline, pin configuration, and electrical ratings. Verify thermal characteristics and mounting methods when substituting with other manufacturers' SiC half-bridge modules.