NXH008P120M3F1PG

FET, MOSFET Arrays Overview

The NXH008P120M3F1PG is a Silicon Carbide (SiC) power module featuring an 8 mΩ, 1200 V M3S MOSFET half-bridge topology within an F1 package. It includes a thermistor for thermal monitoring and utilizes press-fit pins for mounting. The device operates with a continuous drain current of 145 A at Tc = 80°C and supports a maximum junction temperature of 175°C. Key electrical parameters include a drain-source on resistance of 10.9 mΩ at TJ = 25°C and a gate-source voltage range of -10 V to +22 V. The module provides isolation test voltage of 4800 VRMS and has a typical turn-on delay time of 17 ns.

FET, MOSFET Arrays Feature Summary

• Integrated 8 mΩ SiC MOSFET half-bridge with M3S technology
• Built-in thermistor for precise thermal management
• Press-fit pin configuration for secure mechanical connection
• RoHS compliant and free from lead and halides

FET, MOSFET Arrays Applications

• Solar Inverter systems
• Uninterruptible Power Supplies (UPS)
• Electric Vehicle Charging Stations
• Industrial Power applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'G' indicates the absence of pre-applied thermal interface material compared to the 'T' variant. Confirm that the component is supplied in blister trays containing 28 units per package. Ensure compatibility with press-fit assembly processes and verify RoHS compliance documentation prior to procurement.

FET, MOSFET Arrays Selection Notes

Select this module when a low on-resistance half-bridge solution is required for high-voltage applications. Consider the integrated thermistor for simplified thermal monitoring circuits. Evaluate the press-fit mounting style against available PCB or busbar infrastructure. Compare switching loss characteristics at target operating temperatures against alternative topologies.

FET, MOSFET Arrays Part Context

This component belongs to the NXH008P120M3F1 series of EliteSiC modules. It shares the F1 package form factor with other variants in the lineup but differs in on-resistance and thermal interface options. The series is designed for high-efficiency power conversion requiring robust silicon carbide performance.

FET, MOSFET Arrays Replacement Considerations

NXH008P120M3F1PTG serves as a direct functional substitute with identical electrical specifications, differing only by the inclusion of pre-applied thermal interface material.