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The NXH010P120MNF1PTG is a Silicon Carbide (SiC) MOSFET half-bridge module from the EliteSiC NXH010P120MNF1 series. It features a 1200V reverse voltage rating and a typical on-resistance of 10 mOhm. The device utilizes a press-fit installation style within a PIM F1 package, measuring 33.8 x 42.5 mm. It operates within a temperature range of -40°C to +150°C and supports gate-source voltages of -15 V to +25 V. An integrated NTC thermistor is included for thermal monitoring.
Verify the specific ordering suffix against official documentation to confirm package type and terminal configuration. Ensure that the press-fit mounting requirements are compatible with the target PCB or busbar design. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration into regulated products.
Select this component for applications requiring low conduction losses at 1200V blocking capability. The 10 mOhm resistance suits moderate current levels where efficiency is critical. Verify that the system can accommodate the specified gate drive voltage limits and operating temperature range for reliable long-term performance.
This part belongs to the NXH010P120MNF1 family of EliteSiC modules. It shares the same physical footprint and mounting style as other variants in the series, such as the NXH010P90MNF1, allowing for potential form-factor compatibility while differing in electrical specifications like on-resistance and voltage ratings.
Direct substitutes may include other 1200V SiC half-bridge modules with similar on-resistance and package dimensions. Verify pinout compatibility and thermal characteristics when considering alternatives from different manufacturers.