NXH010P120MNF1PTG

NXH010P120MNF1PTG

$141.21
  • Description:MOSFET 2N-CH 1200V 114A
  • Series:-

SKU:51c7765a8e1f Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 1200V 114A
  • Series:-
  • Mfr:onsemi
  • Package:Tray
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N-Channel (Dual) Common Source
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:114A (Tc)
  • Rds On (Max) @ Id, Vgs:14mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id:4.3V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs:454nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:4707pF @ 800V
  • Power - Max:250W (Tj)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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NXH010P120MNF1PTG

Overview

The NXH010P120MNF1PTG is a Silicon Carbide (SiC) MOSFET half-bridge module from the EliteSiC NXH010P120MNF1 series. It features a 1200V reverse voltage rating and a typical on-resistance of 10 mOhm. The device utilizes a press-fit installation style within a PIM F1 package, measuring 33.8 x 42.5 mm. It operates within a temperature range of -40°C to +150°C and supports gate-source voltages of -15 V to +25 V. An integrated NTC thermistor is included for thermal monitoring.

Feature Summary

  • EliteSiC SiC MOSFET technology for high-efficiency power conversion
  • Integrated NTC thermistor for precise thermal management
  • Press-fit mounting interface for robust mechanical connection

Applications

  • Electric vehicle charging infrastructure
  • Energy storage systems
  • Industrial motor drives

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and terminal configuration. Ensure that the press-fit mounting requirements are compatible with the target PCB or busbar design. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration into regulated products.

Selection Notes

Select this component for applications requiring low conduction losses at 1200V blocking capability. The 10 mOhm resistance suits moderate current levels where efficiency is critical. Verify that the system can accommodate the specified gate drive voltage limits and operating temperature range for reliable long-term performance.

Part Context

This part belongs to the NXH010P120MNF1 family of EliteSiC modules. It shares the same physical footprint and mounting style as other variants in the series, such as the NXH010P90MNF1, allowing for potential form-factor compatibility while differing in electrical specifications like on-resistance and voltage ratings.

Replacement Considerations

Direct substitutes may include other 1200V SiC half-bridge modules with similar on-resistance and package dimensions. Verify pinout compatibility and thermal characteristics when considering alternatives from different manufacturers.

NXH010P120MNF1PTGNXH010P120MNF1PTG
$141.21
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