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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 114A
- Series：-
- Mfr：onsemi
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：114A (Tc)
- Rds On (Max) @ Id, Vgs：14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id：4.3V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs：454nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：4707pF @ 800V
- Power - Max：250W (Tj)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The NXH010P120MNF1PTG is a Silicon Carbide (SiC) MOSFET module from onsemi's EliteSiC series, configured as a half-bridge in the PIM F1 package. It features a 1200V reverse voltage rating and a typical on-resistance of 10mΩ. The device supports press-fit installation with a gate-source voltage range of -15V to +25V. Operating temperatures span from -40°C to +150°C. The module integrates an NTC thermistor for thermal monitoring.
Feature Summary
- EliteSiC technology utilizing Silicon Carbide for high-efficiency power switching
- Integrated NTC thermistor for precise internal temperature sensing
- Press-fit mounting style designed for robust mechanical connection
Applications
- Electric vehicle charging infrastructure
- Energy storage systems
- Industrial motor drives
Procurement Notes
Verify the exact suffix against official documentation, as variations may indicate different packaging or terminal configurations. Confirm RoHS compliance status through the manufacturer's datasheet. Ensure the ordering part number matches the specific PIM F1 variant required for the target application design.
Selection Notes
Select this component for applications requiring low conduction losses at 1200V blocking levels. The 10mΩ on-resistance suits high-current designs. Verify that the system layout accommodates the PIM F1 footprint and that the driver circuitry supports the specified gate voltage limits for reliable SiC operation.
Part Context
This part belongs to the NXH010P120MNF1 family of EliteSiC modules. It is distinct from other variants by its specific 10mΩ resistance and F1 package outline. The product line targets high-power density applications where silicon limitations are exceeded.
Replacement Considerations
Direct substitutes within the same family include NXH010P120MNF1PG and NXH010P120MNF1PNG. These share identical electrical characteristics but may differ in tray quantity or specific terminal plating. Cross-brand replacements require careful verification of pinout and thermal interface dimensions.
