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Product Detailed Parameters
- Description：MOSFET 2N-CH 900V 154A
- Series：-
- Mfr：onsemi
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Dual) Common Source
- FET Feature：-
- Drain to Source Voltage (Vdss)：900V
- Current - Continuous Drain (Id) @ 25°C：154A (Tc)
- Rds On (Max) @ Id, Vgs：14mOhm @ 100A, 15V
- Vgs(th) (Max) @ Id：4.3V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs：546.4nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：7007pF @ 450V
- Power - Max：328W (Tj)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The NXH010P90MNF1PG is a Silicon Carbide (SiC) MOSFET half-bridge module from the EliteSiC NXH010P90MNF1 series. It features an N-channel configuration with a drain-source breakdown voltage of 900 V and a continuous drain current of 154 A. The typical on-resistance is 14 mOhms, supporting a power dissipation of 328 W. Operating within a temperature range of -40°C to +150°C, it utilizes press-fit installation in a PIM F1 package. Key switching parameters include a turn-on delay of 53 ns, turn-off delay of 150 ns, rise time of 16 ns, and fall time of 12 ns.
Feature Summary
- EliteSiC technology for high-efficiency power conversion
- Integrated NTC thermistor for thermal monitoring
- Press-fit mounting for robust mechanical connection
Applications
- EV charging infrastructure
- Energy storage systems
- Industrial motor drives
Procurement Notes
Verify the complete part number including suffixes against official datasheets to ensure correct packaging and terminal plating specifications. Confirm that the intended application environment aligns with the specified operating temperature range and thermal management requirements before procurement.
Selection Notes
Select this component for applications requiring low conduction losses at 900V ratings. Ensure gate drive voltages remain within the specified limits. Verify PCB layout capabilities for press-fit termination and adequate heatsinking to manage the 328 W power dissipation rating effectively.
Part Context
This module belongs to the EliteSiC family designed for high-power density applications. It integrates SiC MOSFETs into a compact PIM F1 form factor, offering superior thermal performance compared to discrete solutions. The series targets demanding industrial and automotive environments requiring high reliability.
Replacement Considerations
Direct replacements must match the 900V rating, 14 mOhm resistance, and PIM F1 package dimensions. Verify pinout compatibility and thermal interface specifications when substituting with other manufacturers' SiC half-bridge modules.
