NXH010P90MNF1PTG

$111.71

Description：MOSFET 2N-CH 900V 154A
Series：-

SKU:3df94d22493f Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 900V 154A
Series：-
Mfr：onsemi
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual) Common Source
FET Feature：-
Drain to Source Voltage (Vdss)：900V
Current - Continuous Drain (Id) @ 25°C：154A (Tc)
Rds On (Max) @ Id, Vgs：14mOhm @ 100A, 15V
Vgs(th) (Max) @ Id：4.3V @ 40mA
Gate Charge (Qg) (Max) @ Vgs：546.4nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：7007pF @ 450V
Power - Max：328W (Tj)
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

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NXH010P90MNF1PTG

Overview

The NXH010P90MNF1PTG is a Silicon Carbide (SiC) MOSFET module from onsemi's EliteSiC series, configured as a half-bridge topology. It features a 900V reverse voltage rating and a typical on-resistance of 10mΩ. The device utilizes press-fit installation for secure mounting. Electrical specifications include a gate-source voltage range of -15V to +25V. Operating temperatures span from -40°C to +150°C. The component is packaged in trays with a factory quantity of 28 units per tray.

Feature Summary

Utilizes Silicon Carbide technology for high-performance power switching
Integrates a half-bridge configuration within a single PIM F1 package
Designed for press-fit mounting to ensure robust mechanical connection

Applications

EV charging infrastructure systems
Energy storage and conversion applications
Industrial motor drives requiring high efficiency

Procurement Notes

Verify the specific ordering suffix PTG against official datasheets to confirm packaging type and compliance status. Ensure compatibility with existing thermal management solutions given the 150°C maximum operating temperature limit. Confirm that the press-fit mounting method aligns with the target PCB or baseplate design requirements before finalizing procurement orders.

Selection Notes

Select this module when a 900V SiC half-bridge is required with low conduction losses indicated by the 10mΩ resistance. Compare against the NXH010P120MNF1PTG if higher voltage ratings are needed. Verify that the press-fit interface matches the assembly equipment capabilities. Consider the EliteSiC series benefits for high-frequency operation needs.

Part Context

This part belongs to the NXH010P90MNF1 series of EliteSiC modules. It shares the same physical footprint and pinout with other variants in the family, differing primarily in voltage ratings and specific electrical characteristics. The PIM F1 designation indicates a specific package outline optimized for press-fit applications.