NXH011T120M3F2PTHG

$96.06

Description：MOSFET 4N-CH 1200V 91A 29PIM
Series：-

SKU:612018034026 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 4N-CH 1200V 91A 29PIM
Series：-
Mfr：onsemi
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Solar Inverter)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：91A (Tc)
Rds On (Max) @ Id, Vgs：16mOhm @ 70A, 18V
Vgs(th) (Max) @ Id：4.4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs：306nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：6331pF @ 800V
Power - Max：272W (Tj)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：29-PIM (56.7x42.5)
Grade：-
Qualification：-

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NXH011T120M3F2PTHG

Overview

The NXH011T120M3F2PTHG is a Silicon Carbide (SiC) MOSFET module featuring an 11 mΩ M3S device with a 1200 V drain-source voltage rating. It utilizes a T-type Neutral Point Clamped (TNPC) topology within an F2 package and includes a thermistor for thermal monitoring. The module supports press-fit installation and operates at junction temperatures up to 175°C. Key electrical parameters include a continuous drain current of 91 A, a maximum power dissipation of 272 W, and a gate-source voltage range of -10 V to +22 V.

Feature Summary

Integrates an 11 mΩ M3S SiC MOSFET in a TNPC topology for optimized switching performance.
Features High Performance Substrate (HPS) Direct Bonded Copper (DBC) technology.
Includes an integrated NTC thermistor for precise temperature monitoring.
Utilizes press-fit pins for secure mechanical mounting.

Applications

Solar Inverters
Uninterruptible Power Supplies (UPS)
Electric Vehicle Charging Stations
Industrial Power Systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the presence or absence of pre-applied thermal interface material. Ensure that the selected variant matches the required assembly specifications for your application design. Cross-reference the manufacturer's latest datasheet revision to confirm all technical parameters before finalizing procurement orders.

Selection Notes

Select this component for high-frequency hard-switching applications requiring low conduction losses. Verify that the system can accommodate the recommended operating ranges, specifically the junction temperature limits and gate drive requirements. Confirm compatibility with the F2 package dimensions and press-fit mounting constraints during the initial hardware design phase.

Part Context

This part belongs to onsemi's EliteSiC M3S series, designed for high-efficiency power conversion. It represents a generation of SiC modules optimized for reduced total switching loss compared to previous generations. The F2 package provides a standardized form factor for integration into various industrial and automotive power electronics platforms.