NXH020F120MNF1PG

Overview

NXH020F120MNF1PG is a silicon carbide MOSFET module from onsemi's EliteSiC series. It features an F1 package with press-fit pins, rated for 1200V and 20mΩ typical Rds(on). The half-bridge configuration integrates two N-channel SiC MOSFETs and an NTC thermistor. Operating temperatures range from -40°C to +150°C. Gate-source voltage limits are -15V to +25V. This component is designed for high-efficiency power conversion in demanding industrial applications.

Feature Summary

• EliteSiC technology enables low switching losses and high thermal performance
• Integrated NTC thermistor provides precise junction temperature monitoring
• Press-fit termination ensures robust mechanical connection and reliable current flow

Applications

• Electric vehicle charging infrastructure
• Industrial motor drives
• Uninterruptible power supplies

Procurement Notes

Verify the specific suffix PG against official datasheets to confirm pin compatibility and packaging details. Ensure the ordering part number matches the required press-fit terminal style. Cross-reference RoHS compliance status directly with manufacturer documentation before procurement.

Selection Notes

Select this module for applications requiring 1200V blocking capability and low conduction losses. Verify that the system design accommodates the F1 package dimensions and press-fit mounting requirements. Confirm thermal management solutions align with the specified maximum operating temperature of 150°C.

Part Context

This part belongs to the NXH020F120MNF1 series of EliteSiC modules. It shares the F1 form factor with similar onsemi products like NXH010P120MNF1PTG but differs in internal configuration and resistance ratings. The series targets high-power density converters.

Replacement Considerations

Direct substitutes include NXH010P120MNF1PTG or NXH020P120MNF1PTG if pinout and electrical characteristics match the specific application requirements. Verify package outline and terminal type compatibility before substitution.