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The NXH020U90MNF2PTG is an N-channel MOSFET manufactured by onsemi, belonging to the NXH020U90MNF2PTG series. It features a maximum drain-source voltage (Vdss) of 900 V and a continuous drain current (Id) of 149 A. The device exhibits a maximum on-resistance (Rds(on)) of 14 mΩ at a gate-source voltage of 6 V. Typical gate charge (Qg) is 546.4 nC. The component supports surface mount installation via a 20-pin F2-VIENNA:外壳 180BZ package. It operates within a temperature range of -40°C to 175°C with a maximum power dissipation of 352 W.
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and compliance specifications. Confirm that the F2-VIENNA package variant matches the intended PCB layout requirements. Cross-reference the RoHS status and halide-free designation with current regulatory standards before finalizing procurement orders.
Select this component when designing circuits requiring a 900 V rating combined with high current handling capabilities. Evaluate the 14 mΩ on-resistance against thermal constraints to ensure junction temperatures remain within the specified -40°C to 175°C operational range. Consider the 20-pin surface-mount footprint for assembly compatibility.
This part belongs to the NXH020U90MNF2PTG series from onsemi, designed for high-performance power switching. It utilizes advanced silicon carbide or similar high-voltage technology to achieve low loss characteristics. The F2-VIENNA packaging provides a standardized interface for industrial power modules, ensuring consistent thermal performance across production batches.
NXH020U90MNF2PTG