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Product Detailed Parameters
- Description：22M OHM 1200V 40A M3S SIC 6-PACK
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
NXH022S120M3F1PTG is a Silicon Carbide (SiC) MOSFET module from onsemi's EliteSiC M3S series. It features an N-Channel configuration housed in a PIM-18 screw-mount package. The device supports a drain-source breakdown voltage of 1200 V and delivers a continuous drain current of 40 A. Its typical on-resistance is 22 mΩ, with a gate-source threshold voltage of 2.4 V. Operating temperatures range from -40°C to +150°C, and the power dissipation capacity is rated at 198 W.
Feature Summary
- Utilizes Silicon Carbide technology for high thermal stability and efficiency
- Integrated half-bridge topology simplifies circuit design
- Designed for robust performance under high-voltage switching conditions
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Solar inverters
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific lot traceability requirements prior to acquisition. Ensure storage conditions align with moisture sensitivity levels to prevent package degradation during handling and assembly processes.
Selection Notes
Select this module when a compact half-bridge solution with 1200 V rating is required. Verify that the system can accommodate the PIM-18 screw-mount form factor and that the thermal management infrastructure supports the specified 198 W dissipation limit. Ensure gate drive voltages remain within the -10 V to +22 V operational window.
Part Context
This component belongs to the EliteSiC M3S family, representing onsemi's third-generation silicon carbide technology. The PIM-18 package provides a standardized footprint for industrial power applications, facilitating integration into existing modular designs while offering improved thermal performance over previous discrete solutions.
Replacement Considerations
Direct pin-compatible substitutes within the same PIM-18 form factor include NXH015P120M3F1PTG and NXH010P120MNF1PTG. Selection depends on balancing on-resistance against current handling capabilities. Verify thermal characteristics and gate drive compatibility before substituting.
