ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：30M OHM 1200V 40A M3S SIC 6-PACK
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The NXH030S120M3F1PTG is a Silicon Carbide (SiC) MOSFET module manufactured by onsemi. It utilizes EliteSiC M3S technology and features a Half-Bridge configuration within the PIM-18 package. The device supports screw mounting and operates with N-Channel transistors. Key electrical parameters include a drain-source breakdown voltage of 1200 V, a continuous drain current of 40 A, and a maximum on-resistance of 30 mOhms. It functions within a temperature range of -40°C to +150°C.
Feature Summary
- Incorporates EliteSiC M3S technology for high-performance switching capabilities.
- Features a robust Half-Bridge topology designed for efficient power conversion.
- Utilizes a PIM-18 package structure optimized for thermal management.
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Solar inverters
Procurement Notes
Verify the specific suffix 'PTG' against official datasheets to confirm package and tape/reel specifications. Ensure compatibility with required gate drive voltages and thermal interface materials. Confirm RoHS compliance status through manufacturer documentation before integration into regulated designs.
Selection Notes
Select this component for applications requiring high-voltage SiC performance in a compact half-bridge form factor. Evaluate thermal resistance requirements against the PIM-18 package limits. Compare on-resistance values with alternative modules to ensure optimal efficiency for the target load current and switching frequency.
Part Context
This part belongs to the NXH series of EliteSiC modules from onsemi. These components are engineered for high-frequency, high-efficiency power electronics. The series offers various resistance ratings and topologies to suit diverse industrial and renewable energy converter designs.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout and thermal characteristics match the existing design constraints when considering cross-references.
